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PTVA102001EA データシート (PDF) - Cree, Inc

PTVA102001EA Datasheet PDF - Cree, Inc
部品番号 PTVA102001EA
ダウンロード  PTVA102001EA ダウンロード

ファイルサイズ   451.11 Kbytes
ページ   13 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz

PTVA102001EA Datasheet (PDF)

Go To PDF Page ダウンロード データシート
PTVA102001EA Datasheet PDF - Cree, Inc

部品番号 PTVA102001EA
ダウンロード  PTVA102001EA Click to download

ファイルサイズ   451.11 Kbytes
ページ   13 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz

PTVA102001EA データシート (HTML) - Cree, Inc

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同様の部品番号 - PTVA102001EA

メーカー部品番号データシート部品情報
logo
Infineon Technologies A...
PTVA102001EA INFINEON-PTVA102001EA Datasheet
241Kb / 13P
   Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz
Rev. 03, 2017-08-17
logo
WOLFSPEED, INC.
PTVA102001EA WOLFSPEED-PTVA102001EA Datasheet
540Kb / 13P
   Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz
Rev. 05, 2023-07-10
PTVA102001EA-V1-R0 WOLFSPEED-PTVA102001EA-V1-R0 Datasheet
540Kb / 13P
   Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz
Rev. 05, 2023-07-10
PTVA102001EA-V1-R2 WOLFSPEED-PTVA102001EA-V1-R2 Datasheet
540Kb / 13P
   Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz
Rev. 05, 2023-07-10
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同様の説明 - PTVA102001EA

メーカー部品番号データシート部品情報
logo
WOLFSPEED, INC.
PTVA102001EA WOLFSPEED-PTVA102001EA Datasheet
540Kb / 13P
   Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz
Rev. 05, 2023-07-10
logo
Infineon Technologies A...
PTVA102001EA INFINEON-PTVA102001EA Datasheet
241Kb / 13P
   Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz
Rev. 03, 2017-08-17
logo
Cree, Inc
PTVA104501EH CREE-PTVA104501EH Datasheet
430Kb / 10P
   Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz
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Infineon Technologies A...
PTVA104501EH INFINEON-PTVA104501EH_16 Datasheet
1Mb / 9P
   Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz
Rev. 02.1, 2016-04-19
PTVA093002TC INFINEON-PTVA093002TC Datasheet
210Kb / 10P
   Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 ??960 MHz
Rev. 04, 2014-06-16
logo
WOLFSPEED, INC.
PTVA104501EH WOLFSPEED-PTVA104501EH Datasheet
540Kb / 10P
   Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz
Rev. 04, 2023-07-10
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Infineon Technologies A...
PTFA091503EL INFINEON-PTFA091503EL Datasheet
627Kb / 11P
   Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz
Rev. 03, 2010-08-11
PTFA091503EL INFINEON-PTFA091503EL_16 Datasheet
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   Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 ??960 MHz
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PTF080101S INFINEON-PTF080101S Datasheet
172Kb / 9P
   Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
2004-10-05
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Cree, Inc
PTFB091507FH CREE-PTFB091507FH Datasheet
618Kb / 13P
   Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
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Cree, Inc について


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。




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