データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

PXAC213308FV データシート (PDF) - Cree, Inc

PXAC213308FV Datasheet PDF - Cree, Inc
部品番号 PXAC213308FV
ダウンロード  PXAC213308FV ダウンロード

ファイルサイズ   518.73 Kbytes
ページ   8 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz

PXAC213308FV Datasheet (PDF)

Go To PDF Page ダウンロード データシート
PXAC213308FV Datasheet PDF - Cree, Inc

部品番号 PXAC213308FV
ダウンロード  PXAC213308FV Click to download

ファイルサイズ   518.73 Kbytes
ページ   8 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz

PXAC213308FV データシート (HTML) - Cree, Inc

PXAC213308FV Datasheet HTML 1Page - Cree, Inc PXAC213308FV Datasheet HTML 2Page - Cree, Inc PXAC213308FV Datasheet HTML 3Page - Cree, Inc PXAC213308FV Datasheet HTML 4Page - Cree, Inc PXAC213308FV Datasheet HTML 5Page - Cree, Inc PXAC213308FV Datasheet HTML 6Page - Cree, Inc PXAC213308FV Datasheet HTML 7Page - Cree, Inc PXAC213308FV Datasheet HTML 8Page - Cree, Inc



同様の部品番号 - PXAC213308FV

メーカー部品番号データシート部品情報
logo
Infineon Technologies A...
PXAC213308FV INFINEON-PXAC213308FV Datasheet
1Mb / 8P
   Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
Rev. 02, 2016-05-04
More results


同様の説明 - PXAC213308FV

メーカー部品番号データシート部品情報
logo
Infineon Technologies A...
PXAC213308FV INFINEON-PXAC213308FV Datasheet
1Mb / 8P
   Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
Rev. 02, 2016-05-04
logo
Cree, Inc
PTFB213208FV CREE-PTFB213208FV Datasheet
659Kb / 13P
   Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
logo
Infineon Technologies A...
PTFB213208FV INFINEON-PTFB213208FV Datasheet
221Kb / 13P
   Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz
Rev. 02, 2012-07-03
logo
WOLFSPEED, INC.
PXAE213708NB WOLFSPEED-PXAE213708NB Datasheet
707Kb / 8P
   Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz
Rev. 04, 2022-12-20
logo
Infineon Technologies A...
PTFC210202FC INFINEON-PTFC210202FC_16 Datasheet
655Kb / 9P
   Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz
Rev. 03.4, 2016-06-22
logo
Cree, Inc
PTFC210202FC CREE-PTFC210202FC Datasheet
700Kb / 9P
   Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
logo
WOLFSPEED, INC.
PTFC210202FC-V1 WOLFSPEED-PTFC210202FC-V1 Datasheet
828Kb / 9P
   Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz
Rev. 06, 2023-06-28
logo
Cree, Inc
PXAD214218FV CREE-PXAD214218FV Datasheet
524Kb / 9P
   Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz
logo
Infineon Technologies A...
PXAD214218FV INFINEON-PXAD214218FV Datasheet
391Kb / 9P
   Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz
Rev. 02.2, 2017-03-30
logo
Cree, Inc
PTFB210801FA CREE-PTFB210801FA Datasheet
636Kb / 11P
   Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
More results




Cree, Inc について


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。




リンク URL



プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com