メーカー | 部品番号 | データシート | 部品情報 |
Infineon Technologies A... |
PXAC213308FV
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
Rev. 02, 2016-05-04 |
Cree, Inc |
PTFB213208FV
|
659Kb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
|
Infineon Technologies A... |
PTFB213208FV
|
221Kb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz
Rev. 02, 2012-07-03 |
WOLFSPEED, INC. |
PXAE213708NB
|
707Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz
Rev. 04, 2022-12-20 |
Infineon Technologies A... |
PTFC210202FC
|
655Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz
Rev. 03.4, 2016-06-22 |
Cree, Inc |
PTFC210202FC
|
700Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
|
WOLFSPEED, INC. |
PTFC210202FC-V1
|
828Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz
Rev. 06, 2023-06-28 |
Cree, Inc |
PXAD214218FV
|
524Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz
|
Infineon Technologies A... |
PXAD214218FV
|
391Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz
Rev. 02.2, 2017-03-30 |
Cree, Inc |
PTFB210801FA
|
636Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
|