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PXAC243502FV データシート (PDF) - Cree, Inc

PXAC243502FV Datasheet PDF - Cree, Inc
部品番号 PXAC243502FV
ダウンロード  PXAC243502FV ダウンロード

ファイルサイズ   543.24 Kbytes
ページ   10 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz

PXAC243502FV Datasheet (PDF)

Go To PDF Page ダウンロード データシート
PXAC243502FV Datasheet PDF - Cree, Inc

部品番号 PXAC243502FV
ダウンロード  PXAC243502FV Click to download

ファイルサイズ   543.24 Kbytes
ページ   10 Pages
メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc
部品情報 High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz

PXAC243502FV データシート (HTML) - Cree, Inc

PXAC243502FV Datasheet HTML 1Page - Cree, Inc PXAC243502FV Datasheet HTML 2Page - Cree, Inc PXAC243502FV Datasheet HTML 3Page - Cree, Inc PXAC243502FV Datasheet HTML 4Page - Cree, Inc PXAC243502FV Datasheet HTML 5Page - Cree, Inc PXAC243502FV Datasheet HTML 6Page - Cree, Inc PXAC243502FV Datasheet HTML 7Page - Cree, Inc PXAC243502FV Datasheet HTML 8Page - Cree, Inc PXAC243502FV Datasheet HTML 9Page - Cree, Inc PXAC243502FV Datasheet HTML 10Page - Cree, Inc

PXAC243502FV 製品詳細

Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeeds advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features
• Asymmetric design
   - Main: 150 W P1dB
   - Peak: 200 W P1dB
• Broadband internal matching
• CW performance at 2350 MHz, 28 V
   - Ouput power = 250 W P1dB
   - Efficiency = 46%
   - Gain = 16 dB
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
   JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant




同様の部品番号 - PXAC243502FV

メーカー部品番号データシート部品情報
logo
Infineon Technologies A...
PXAC243502FV INFINEON-PXAC243502FV Datasheet
1Mb / 10P
   High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2015-04-13
PXAC243502FVV1R0 INFINEON-PXAC243502FVV1R0 Datasheet
1Mb / 10P
   High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22
PXAC243502FVV1R0XTMA1 INFINEON-PXAC243502FVV1R0XTMA1 Datasheet
1Mb / 10P
   High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22
PXAC243502FVV1R250 INFINEON-PXAC243502FVV1R250 Datasheet
1Mb / 10P
   High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22
PXAC243502FVV1R250XTMA1 INFINEON-PXAC243502FVV1R250XTMA1 Datasheet
1Mb / 10P
   High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22
More results


同様の説明 - PXAC243502FV

メーカー部品番号データシート部品情報
logo
Infineon Technologies A...
PXAC243502FV INFINEON-PXAC243502FV_16 Datasheet
1Mb / 10P
   High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22
PTFB241402F INFINEON-PTFB241402F Datasheet
556Kb / 13P
   High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 03, 2010-04-19
PTFB241402F INFINEON-PTFB241402F_16 Datasheet
810Kb / 13P
   High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15
PTAC240502FC INFINEON-PTAC240502FC_16 Datasheet
1Mb / 8P
   Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
Rev. 02.3, 2016-06-21
logo
Cree, Inc
PXAC241702FC CREE-PXAC241702FC Datasheet
577Kb / 10P
   Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
PTAC240502FC CREE-PTAC240502FC Datasheet
606Kb / 8P
   Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
logo
Infineon Technologies A...
PXAC241702FC INFINEON-PXAC241702FC Datasheet
1Mb / 10P
   Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
Rev. 02.1, 2016-06-22
logo
Cree, Inc
PXAC241002FC CREE-PXAC241002FC Datasheet
279Kb / 8P
   Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
logo
WOLFSPEED, INC.
PTAC240502FC_V1 WOLFSPEED-PTAC240502FC_V1 Datasheet
1Mb / 8P
   Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Rev. 05, 2023-06-28
logo
Cree, Inc
PTFC270051M CREE-PTFC270051M Datasheet
745Kb / 14P
   High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
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Cree, Inc について


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。




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