Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Features • Advanced Process Technology • Ultra Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche Allowed up to • Lead-Free
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