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AMS3406 データシート (PDF) - Advanced Monolithic Systems Ltd

AMS3406 Datasheet PDF - Advanced Monolithic Systems Ltd
部品番号 AMS3406
ダウンロード  AMS3406 ダウンロード

ファイルサイズ   449.75 Kbytes
ページ   6 Pages
メーカー  AMS [Advanced Monolithic Systems Ltd]
ホームページ   http://www.ams-semitech.com
Logo AMS - Advanced Monolithic Systems Ltd
部品情報 Super high density cell design for extremely low RDS(ON)

AMS3406 Datasheet (PDF)

Go To PDF Page ダウンロード データシート
AMS3406 Datasheet PDF - Advanced Monolithic Systems Ltd

部品番号 AMS3406
ダウンロード  AMS3406 Click to download

ファイルサイズ   449.75 Kbytes
ページ   6 Pages
メーカー  AMS [Advanced Monolithic Systems Ltd]
ホームページ   http://www.ams-semitech.com
Logo AMS - Advanced Monolithic Systems Ltd
部品情報 Super high density cell design for extremely low RDS(ON)

AMS3406 データシート (HTML) - Advanced Monolithic Systems Ltd

AMS3406 Datasheet HTML 1Page - Advanced Monolithic Systems Ltd AMS3406 Datasheet HTML 2Page - Advanced Monolithic Systems Ltd AMS3406 Datasheet HTML 3Page - Advanced Monolithic Systems Ltd AMS3406 Datasheet HTML 4Page - Advanced Monolithic Systems Ltd AMS3406 Datasheet HTML 5Page - Advanced Monolithic Systems Ltd AMS3406 Datasheet HTML 6Page - Advanced Monolithic Systems Ltd

AMS3406 製品詳細

DESCRIPTION
AMS3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE
● 30V/5.4A, RDS(ON) = 26mΩ(Typ.) @VGS = 10V
● 30V/4.6A, RDS(ON) = 36mΩ @VGS = 4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23-3L package design




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