General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. Features • 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V • Low gate charge ( typical 19 nC) • Low Crss ( typical 40 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 150oC maximum junction temperature rating • RoHS Compliant
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