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IRF422 データシート (PDF) - New Jersey Semi-Conductor Products, Inc.

IRF422 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.
部品番号 IRF422
ダウンロード  IRF422 ダウンロード

ファイルサイズ   142.02 Kbytes
ページ   3 Pages
メーカー  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
ホームページ  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
部品情報 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

IRF422 Datasheet (PDF)

Go To PDF Page ダウンロード データシート
IRF422 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.

部品番号 IRF422
ダウンロード  IRF422 Click to download

ファイルサイズ   142.02 Kbytes
ページ   3 Pages
メーカー  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
ホームページ  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
部品情報 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

IRF422 データシート (HTML) - New Jersey Semi-Conductor Products, Inc.

IRF422 Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc. IRF422 Datasheet HTML 2Page - New Jersey Semi-Conductor Products, Inc. IRF422 Datasheet HTML 3Page - New Jersey Semi-Conductor Products, Inc.

IRF422 製品詳細

Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 2.2A and 2.5A, 450V and 500V
• rDS(ON)= 3-Ofi and 4.0Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature




同様の部品番号 - IRF422

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同様の説明 - IRF422

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