メーカー | 部品番号 | データシート | 部品情報 |
Panasonic Battery Group |
ERJ3GEY0R00V
|
1Mb/28P
|
Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET
|
NXP Semiconductors |
ERJ3GEY0R00V
|
367Kb/14P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 3, 9/2014
|
Panasonic Semiconductor |
ERJ3GEY0R00V
|
1Mb/33P
|
3 A Synchronous DC-DC Step down Regulator
|
NXP Semiconductors |
ERJ3GEY0R00V
|
497Kb/16P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 5, 3/2016
|
Panasonic Semiconductor |
ERJ3GEY0R00V
|
1Mb/43P
|
10 A Synchronous DC-DC Step down Regulator
|
ERJ3GEY0R00V
|
607Kb/20P
|
5 to 25 V, VOUT = 1.2 to 22 V, 2-channel DC-DC Controller IC with Step down regulation
2013-06-28
|
ERJ3GEY0R00V
|
1Mb/36P
|
7 A Synchronous DC-DC Step down Regulator,
|
ERJ3GEY0R00V
|
1Mb/23P
|
VIN = 5 to 25 V, 1-channel DC-DC Step down Regulator integrated N-channel Power MOSFET for USB
2013-11-08
|
NXP Semiconductors |
ERJ3GEY0R00V
|
438Kb/14P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 7, 9/2014
|
ERJ3GEY0R00V
|
403Kb/14P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 7, 9/2014
|
ERJ3GEY0R00V
|
413Kb/14P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 7, 9/2014
|
ERJ3GEY0R00V
|
364Kb/15P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 5, 3/2008
|
ERJ3GEY0R00V
|
416Kb/14P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 7, 9/2014
|
ERJ3GEY0R00V
|
423Kb/14P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 8, 9/2014
|
ERJ3GEY0R00V
|
403Kb/15P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 7, 2/2012
|