メーカー | 部品番号 | データシート | 部品情報 |
Toshiba Semiconductor |
GT10J301
|
321Kb/6P
|
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT10J301
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT10J301
|
493Kb/7P
|
HIGH POWER SWITCHING APPLICATIONS
|
GT10J303
|
291Kb/6P
|
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT10J303
|
473Kb/7P
|
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
GT10J303
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT10J303
|
473Kb/7P
|
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
GT10J311
|
322Kb/6P
|
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT10J312
|
295Kb/6P
|
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT10J312
|
509Kb/7P
|
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
GT10J312
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT10J312
|
509Kb/7P
|
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
GT10J321
|
158Kb/6P
|
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
|
GT10J321
|
204Kb/7P
|
Silicon N Channel IGBT High Power Switching Applications
|
GT10J321
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT10J321
|
204Kb/7P
|
Silicon N Channel IGBT High Power Switching Applications
|