メーカー | 部品番号 | データシート | 部品情報 |
International Rectifier |
IRF7663
|
77Kb/7P
|
Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
|
IRF7663PBF
|
151Kb/7P
|
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
|
IRF7663TR
|
82Kb/7P
|
Trench Technology
|
IRF7665S2PBF
|
253Kb/9P
|
Key parameters optimized for Class-D audio amplifier applications
|
IRF7665S2PBF
|
253Kb/9P
|
Can deliver up to 100W per channel into 8 with no heatsink
|
IRF7665S2PBF
|
253Kb/9P
|
Can deliver up to 100W per channel into 8 with no heatsink
|
IRF7665S2TR1PBF
|
253Kb/9P
|
Key parameters optimized for Class-D audio amplifier applications
|
IRF7665S2TRPBF
|
2Mb/6P
|
Benchmark MOSFETs Product Selection Guide
|
Search Partnumber :
Start with "IRF766" -
Total : 26 ( 1/2 Page) |
International Rectifier |
IRF7663
|
77Kb/7P |
Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
|
IRF7663PBF
|
151Kb/7P |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
|
IRF7663TR
|
82Kb/7P |
Trench Technology
|
IRF7665S2PBF
|
253Kb/9P |
Can deliver up to 100W per channel into 8 with no heatsink
|
IRF7665S2PBF
|
253Kb/9P |
Key parameters optimized for Class-D audio amplifier applications
|
IRF7665S2PBF
|
253Kb/9P |
Can deliver up to 100W per channel into 8 with no heatsink
|
IRF7665S2TR1PBF
|
253Kb/9P |
Key parameters optimized for Class-D audio amplifier applications
|
IRF7665S2TRPBF
|
2Mb/6P |
Benchmark MOSFETs Product Selection Guide
|
IRF7601
|
116Kb/8P |
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
|
IRF7601PBF
|
214Kb/8P |
ULTRA LOW ON RESISTANCE
|
IRF7601PBF
|
214Kb/8P |
Generation V Technology
|
IRF7601PBF
|
214Kb/8P |
ULTRA LOW ON RESISTANCE
|