メーカー | 部品番号 | データシート | 部品情報 |
Motorola, Inc |
IRF841
|
146Kb/2P
|
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
Samsung semiconductor |
IRF841
|
272Kb/5P
|
N-CHANNEL POWER MOSFETS
|
Fairchild Semiconductor |
IRF841
|
150Kb/5P
|
N-Channel Power MOSFETs, 8A, 450 V/500V
|
International Rectifier |
IRF841
|
544Kb/8P
|
TRANSISTORS N-CHANNEL
|
STMicroelectronics |
IRF841
|
334Kb/9P
|
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
Inchange Semiconductor ... |
IRF841
|
66Kb/2P
|
isc N-Channel MOSFET Transistor
|
ARTSCHIP ELECTRONICS CO... |
IRF841
|
271Kb/5P
|
N-Channel Power MOSFETs
|
STMicroelectronics |
IRF841FI
|
334Kb/9P
|
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
Inchange Semiconductor ... |
IRF841FI
|
65Kb/2P
|
isc N-Channel MOSFET Transistor
|
Search Partnumber :
Start with "IRF841" -
Total : 102 ( 1/6 Page) |
STMicroelectronics |
IRF841FI
|
334Kb/9P |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
Inchange Semiconductor ... |
IRF841FI
|
65Kb/2P |
isc N-Channel MOSFET Transistor
|
Motorola, Inc |
IRF840
|
146Kb/2P |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
NXP Semiconductors |
IRF840
|
60Kb/7P |
PowerMOS transistor Avalanche energy rated
March 1999 Rev 1.000 |
STMicroelectronics |
IRF840
|
93Kb/8P |
N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET
|
Samsung semiconductor |
IRF840
|
272Kb/5P |
N-CHANNEL POWER MOSFETS
|
Fairchild Semiconductor |
IRF840
|
150Kb/5P |
N-Channel Power MOSFETs, 8A, 450 V/500V
|
IRF840
|
911Kb/10P |
500V N-Channel MOSFET
|
Intersil Corporation |
IRF840
|
56Kb/7P |
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
|
International Rectifier |
IRF840
|
170Kb/6P |
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
|
IRF840
|
544Kb/8P |
TRANSISTORS N-CHANNEL
|