| メーカー | 部品番号 | データシート | 部品情報 |
Intersil Corporation |
IRFF210
|
325Kb/7P
|
2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
International Rectifier |
IRFF210
|
130Kb/7P
|
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)
|
Seme LAB |
IRFF210
|
16Kb/1P
|
N-Channel MOSFET in a Hermetically sealed TO39
|
| Search Partnumber :
Start with "IRFF210" -
Total : 90 ( 1/5 Page) |
New Jersey Semi-Conduct... |
IRFF212
|
871Kb/2P |
RELD EFFECT POWER TRANSISTOR
|
|
IRFF213
|
871Kb/2P |
RELD EFFECT POWER TRANSISTOR
|
Intersil Corporation |
IRFF220
|
325Kb/7P |
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
|
Seme LAB |
IRFF220
|
45Kb/2P |
N?밅HANNEL POWER MOSFET
|
New Jersey Semi-Conduct... |
IRFF220
|
80Kb/2P |
Absolute Maximum Ratings
|
Intersil Corporation |
IRFF230
|
327Kb/7P |
5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
|
Seme LAB |
IRFF230
|
42Kb/2P |
N-CHANNEL ENHANCEMENT
|
International Rectifier |
IRFF024
|
132Kb/7P |
60V, N-CHANNEL
|
Seme LAB |
IRFF024
|
16Kb/1P |
N-Channel MOSFET in a Hermetically sealed TO39
|
|
IRFF034
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
|
|
IRFF110
|
16Kb/1P |
N-Channel MOSFET in a Hermetically sealed TO39
|
GE Solid State |
IRFF110
|
176Kb/5P |
Power MOS Field-Effect Transistors
|
Intersil Corporation |
IRFF110
|
328Kb/7P |
3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET
|
New Jersey Semi-Conduct... |
IRFF110
|
474Kb/2P |
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
GE Solid State |
IRFF111
|
176Kb/5P |
Power MOS Field-Effect Transistors
|
New Jersey Semi-Conduct... |
IRFF111
|
474Kb/2P |
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
|
IRFF112
|
474Kb/2P |
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
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