メーカー | 部品番号 | データシート | 部品情報 |
International Rectifier |
IRFF024
|
132Kb/7P
|
60V, N-CHANNEL
|
Seme LAB |
IRFF024
|
16Kb/1P
|
N-Channel MOSFET in a Hermetically sealed TO39
|
IRFF034
|
15Kb/1P
|
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
|
Intersil Corporation |
IRFF110
|
328Kb/7P
|
3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET
|
GE Solid State |
IRFF110
|
176Kb/5P
|
Power MOS Field-Effect Transistors
|
Seme LAB |
IRFF110
|
16Kb/1P
|
N-Channel MOSFET in a Hermetically sealed TO39
|
New Jersey Semi-Conduct... |
IRFF110
|
474Kb/2P
|
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
GE Solid State |
IRFF111
|
176Kb/5P
|
Power MOS Field-Effect Transistors
|
New Jersey Semi-Conduct... |
IRFF111
|
474Kb/2P
|
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
GE Solid State |
IRFF112
|
176Kb/5P
|
Power MOS Field-Effect Transistors
|
New Jersey Semi-Conduct... |
IRFF112
|
474Kb/2P
|
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
GE Solid State |
IRFF113
|
176Kb/5P
|
Power MOS Field-Effect Transistors
|
Intersil Corporation |
IRFF120
|
325Kb/7P
|
6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET
|
International Rectifier |
IRFF120
|
131Kb/7P
|
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
|
GE Solid State |
IRFF120
|
165Kb/5P
|
N-Channel Enhancement-Mode Power MOS Field-Effect Transistors
|
New Jersey Semi-Conduct... |
IRFF120
|
156Kb/3P
|
6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET
|
GE Solid State |
IRFF121
|
165Kb/5P
|
N-Channel Enhancement-Mode Power MOS Field-Effect Transistors
|
IRFF122
|
165Kb/5P
|
N-Channel Enhancement-Mode Power MOS Field-Effect Transistors
|
IRFF123
|
165Kb/5P
|
N-Channel Enhancement-Mode Power MOS Field-Effect Transistors
|
New Jersey Semi-Conduct... |
IRFF130
|
150Kb/3P
|
8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET
|