メーカー | 部品番号 | データシート | 部品情報 |
Samsung semiconductor |
IRFR9010
|
306Kb/5P
|
P-CHANNEL POWER MOSFETS
|
Vishay Siliconix |
IRFR9010
|
291Kb/10P
|
Power MOSFET
Rev. D, 04-Feb-13
|
Inchange Semiconductor ... |
IRFR9010
|
308Kb/2P
|
isc P-Channel MOSFET Transistor
|
Vishay Siliconix |
IRFR9010
|
1Mb/13P
|
Power MOSFET
01-Jan-2022
|
IRFR9010PBF
|
291Kb/10P
|
Power MOSFET
Rev. D, 04-Feb-13
|
IRFR9010PBF
|
1Mb/13P
|
Power MOSFET
01-Jan-2022
|
IRFR9010TRLPBFA
|
1Mb/13P
|
Power MOSFET
01-Jan-2022
|
VBsemi Electronics Co.,... |
IRFR9010TRPBF
|
1Mb/8P
|
P-Channel 60-V (D-S) MOSFET
|
Vishay Siliconix |
IRFR9010TRPBFA
|
1Mb/13P
|
Power MOSFET
01-Jan-2022
|
Samsung semiconductor |
IRFR9014
|
306Kb/5P
|
P-CHANNEL POWER MOSFETS
|
Vishay Siliconix |
IRFR9014
|
1Mb/8P
|
Power MOSFET
S-81394-Rev. A, 21-Jul-08
|
Kersemi Electronic Co.,... |
IRFR9014
|
4Mb/7P
|
Power MOSFET
|
Inchange Semiconductor ... |
IRFR9014
|
321Kb/2P
|
isc P-Channel MOSFET Transistor
|
Vishay Siliconix |
IRFR9014
|
1Mb/13P
|
Power MOSFET
01-Jan-2022
|
TECH PUBLIC Electronics... |
IRFR9014
|
2Mb/5P
|
P-Channel Enhancement Mode MOSFETl
|
International Rectifier |
IRFR9014
|
177Kb/6P
|
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)
|
IRFR9014
|
188Kb/6P
|
HEXFET Power MOSFET
|
IRFR9014PBF
|
1Mb/10P
|
HEXFET짰 Power MOSFET
|
Vishay Siliconix |
IRFR9014PBF
|
1Mb/8P
|
Power MOSFET
S-81394-Rev. A, 21-Jul-08
|
Kersemi Electronic Co.,... |
IRFR9014PBF
|
4Mb/7P
|
Power MOSFET
|