2SC3231 / New Jersey Semi-Conductor Products, Inc. - データシート(PDF) Chat AI

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Part No.	2SC3231
Manufacturer	NJSEMI
Size	124 Kbytes
Pages	2 pages
Description	Silicon NPN Power Transistor

Datasheet Summary with AI

️· TO-220C package
- Pin 1: Base
- Pin 2: Collector
- Pin 1: Emitter

## Electrical Characteristics (Tc=25°C)
️· VcE(sat) (Collector-Emitter Saturation Voltage): 30V (Max)
️· VBE(sat) (Base-Emitter Saturation Voltage): 20V (Max)
️· ICBO (Collector Cutoff Current): 1uA (Max)
️· IEBO (Emitter Cutoff Current): 150uA (Max)
️· hFE1 (DC Current Gain): 8 (Typ)
️· hFE2 (DC Current Gain): 10 (Typ)
️· fT (Current-Gain - Bandwidth Product): 150 MHz (Typ)

# 2SC3231 Silicon NPN Power Transistor

## Description
️· Large Current Capability
️· High Collector Power Dissipation
️· Designed for BAA/ TV horizontal deflection output applications.

## Absolute Maximum Ratings (Ta=25°C)
️· VCBO (Collector-Base Voltage): 200V
️· VCEO (Collector-Emitter Voltage): 60V
️· VEBO (Emitter-Base Voltage): 5V
️· Ic (Collector Current - Continuous): 4A
️· ICM (Collector Current - Peak): 10A
️· IB (Base Current - Continuous): 1A
️· PC (Total Power Dissipation @ Ta=25°C): 2W
️· PC (Total Power Dissipation @ Tc=25°C): 40W
️· Tj (Junction Temperature): 150°C
️· Tstg (Storage Temperature Range): -55°C to 150°C

## Package and Pinout
️· TO-220C package
- Pin 1: Base
- Pin 2: Collector
- Pin 1: Emitter

## Electrical Characteristics (Tc=25°C)
️· VcE(sat) (Collector-Emitter Saturation Voltage): 30V (Max)
️· VBE(sat) (Base-Emitter Saturation Voltage): 20V (Max)
️· ICBO (Collector Cutoff Current): 1uA (Max)
️· IEBO (Emitter Cutoff Current): 150uA (Max)
️· hFE1 (DC Current Gain): 8 (Typ)
️· hFE2 (DC Current Gain): 10 (Typ)
️· fT (Current-Gain - Bandwidth Product): 150 MHz (Typ)