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ISCN22 Datasheet with Chat AI

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Part No.	ISCN22
Manufacturer	ISC
Size	174 Kbytes
Pages	1 page
Description	isc NPN Power Transistor Die

Datasheet Summary with AI

# iscN22 NPN Power Transistor Die

## Physical Characteristics

️· Die Size: 300um x 300um
️· Thickness: 165 ± 15um
️· Metal Layers:
- Solder Joint Layer: Aluminum (AL), 2.8 ± 0.3um
- Backside Layer: Gold (Au) ≥ 1.2um
️· Bonding Area:
- Emitter: 100um x 100um
- Base: 100um x 100um
️· Scribe Line Size: 50um
️· Wafer Size: φ125mm
️· Estimated Gross Die Count: 114000

## Absolute Maximum Ratings (Ta=25℃)

️· VCBO: Collector-Base Voltage: 60V
️· VCEO: Collector-Emitter Voltage: 40V
️· VEBO: Emitter-Base Voltage: 6V
️· IC: Collector Current (Continuous): 200mA
️· PC: Collector Power Dissipation: 200mW
️· TJ: Junction Temperature: 150℃

## Electrical Characteristics (TC=25℃)

️· V(BR)CEO: Collector-Emitter Breakdown Voltage: 60V (IC=10µA, IB=0)
️· V(BR)CBO: Collector-Base Breakdown Voltage: 40V (IC=1mA, IE=0)
️· V(BR)EBO: Emitter-Base Breakdown Voltage: 6V (IE=10µA, IC=0)
️· VCE(sat): Collector-Emitter Saturation Voltage: 0.3V (IC=50mA, IB=5mA)
️· VBE(sat): Base-Emitter Saturation Voltage: 0.95V (IC=50mA, IB=5mA)
️· ICBO: Collector Cutoff Current: 100nA (VCB=30V, IE=0)
️· IEBO: Emitter Cutoff Current: 100nA (VEB=3V, IC=0)
️· hFE (DC Current Gain):
- IC=10mA, VCE=1V: 100 - 300
- IC=0.1mA, VCE=1V: 40
- IC=100mA, VCE=1V: 30
️· fT (Gain Bandwidth Product): 250 MHz (VCE=20V, IC=10mA, f=100MHz)

## Company Information

️· Website: [www.iscsemi.com](http://www.iscsemi.com)
️· isc & iscsemi is a registered trademark.