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MA3S795E Datasheet with Chat AI
Part No.MA3S795E
ManufacturerPANASONIC
Size46 Kbytes
Pages2 pages
DescriptionSilicon epitaxial planar type
Datasheet Summary with AI

The MA3S795E is a Schottky Barrier Diode (SBD) designed for use in switching circuits.
It features an extra-small package for high-density mounting and is optimal for low voltage rectification due to its low forward voltage (VF) of 0.3V or less at 1mA.
It also has a short reverse recovery time (t rr), making it suitable for high-frequency rectification.
The diode has an absolute maximum reverse voltage of 30V and a peak forward current of 150mA.
It is sensitive to electric shock and has a rated input/output frequency of 2000MHz.
The electrical characteristics of the diode are provided, including reverse current, forward voltage, terminal capacitance, and reverse recovery time.
The diode is also shown to have a detection efficiency of 65% at certain input conditions.
The datasheet includes graphs showing the forward voltage vs.
forward current, reverse current vs.
reverse voltage, and terminal capacitance vs.
reverse voltage at different ambient temperatures.
The diode is also shown to have a bias application unit and pulse generator for testing purposes.

Datasheet Summary with AI

The MA3S795E is a Schottky Barrier Diode (SBD) designed for use in switching circuits.
It features an extra-small package for high-density mounting and is optimal for low voltage rectification due to its low forward voltage (VF) of 0.3V or less at 1mA.
It also has a short reverse recovery time (t rr), making it suitable for high-frequency rectification.
The diode has an absolute maximum reverse voltage of 30V and a peak forward current of 150mA.
It is sensitive to electric shock and has a rated input/output frequency of 2000MHz.
The electrical characteristics of the diode are provided, including reverse current, forward voltage, terminal capacitance, and reverse recovery time.
The diode is also shown to have a detection efficiency of 65% at certain input conditions.
The datasheet includes graphs showing the forward voltage vs.
forward current, reverse current vs.
reverse voltage, and terminal capacitance vs.
reverse voltage at different ambient temperatures.
The diode is also shown to have a bias application unit and pulse generator for testing purposes.

Part No.MA3S795E
ManufacturerPANASONIC
Size46 Kbytes
Pages2 pages
DescriptionSilicon epitaxial planar type
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