# MBD1505 Switching Transistor

## Description

️· Available in SOT-23 package
️· General switching application
️· Excellent hFE Linearity: hFE(2) = 25 (MIN.) at VCE=-6V, IC=400mA
️· RoHS Compliant

## Ordering Information

Package Type	Part Number
SOT-23	MBD1505
SPQ	3,000pcs/ Reel

## Absolute Maximum Ratings (TA=25°C)

️· VCBO (Collector-Base Voltage): -35V
️· VCEO (Collector-Emitter Voltage): -30V
️· VEBO (Emitter-Base Voltage): -5V
️· IC (Collector Current): -500mA
️· IB (Base Current): -50mA
️· PC (Collector Power Dissipation): 150mW
️· TJ (Junction Temperature): 150°C
️· TSTG (Storage Temperature Range): -55 ~150°C

## Electrical Characteristics (TA=25°C)

️· ICBO (Collector Cut-off Current): -0.1 μA (VCB=-35V, IE=0)
️· IEBO (Emitter Cut-off Current): -0.1 μA (VEB=-5V, IC=0)
️· hFE(1) (DC Current Gain): 70 - 400 (VCE=-1V, IC=-100mA)
️· hFE(2) (DC Current Gain): 25 - (VCE=-6V, IC=-400mA)
️· VCE(sat) (Collector-Emitter Saturation Voltage): -0.1 to -0.25 V (IC=100mA, IB=-10mA)
️· VBE (Base-Emitter Voltage): -0.8 to -1.0 V (VCE=-1V, IC=-100mA)
️· fT (Transition Frequency): 200 MHz (VCE=-6V, IC=-20mA)
️· Cob (Collector Output Capacitance): 13 pF (VCE=-6V, IE=0, f=1MHz)

## Typical Characteristics

️· Illustrative figures depicting I C – V CE, h FE - I C, V CE(sat) – I C, I B - V BE, P C - T A.

## Package Information (SOT-23)

️· Detailed dimensional specifications (A-P) provided in a table.