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Hello, Please ask a question about TCET4600_V01 Datasheet
# Example questions:
➢ How does increasing the phase angle affect the forward current transfer ratio (ctr)?
➢ What is the typical collector-emitter voltage (vce) used in figures 10 and 8 to generate the respective graphs?
➢ How does increasing the load resistance (rl) affect the 'ton' switching time?
# TCET4600 Optocoupler Datasheet Summary
## Description
The TCET4600 is a quad-channel optocoupler with a phototransistor output and AC input, packaged in a 16-pin DIP. It uses gallium arsenide infrared-emitting diodes.
## Features
· Low coupling capacity (0.2 pF typical)
· High common mode rejection
· Low temperature coefficient of CTR
· High isolation voltages:
- Impulse Voltage (VIOTM): 10 kV peak
- Partial Discharge Voltage (Vpd): 1.6 kV peak
- Isolation Voltage (VIOWM): 600 VRMS
- Recurring Peak Voltage (VIORM): 890 Vpeak
· Minimum insulation thickness: ≥ 0.4 mm
· Creepage current resistance: CTI ≥ 175
· Agency Approvals: UL/cUL, DIN EN 60747-5-5 (VDE), FIMKO
## Absolute Maximum Ratings
· Forward Current (IF): ± 60 mA
· Collector Emitter Voltage (VCEO): 70 V
· Collector Current (IC): 50 mA
· Total Power Dissipation (Ptot): 250 mW
· Operating Temperature (Tamb): -55 to +100 °C
## Electrical Characteristics (Tamb = 25 °C)
· Forward Voltage (VF): 1.25 - 1.6 V (IF = ± 50 mA)
· Collector Dark Current (ICEO): ≤ 100 nA
· Collector Emitter Saturation Voltage (VCEsat): ≤ 0.3 V (IF = 10 mA, IC = 1 mA)
· Current Transfer Ratio (CTR): 20-300 % (VCE = 5V, IF = ± 5 mA)
## Package Dimensions
· DIP-16, 7.62 mm pitch
## Safety and Insulation Ratings
· Isolation Resistance (RIO): ≥ 10^12 Ω (VIO = 500 V, Tamb = 25°C)
· Partial Discharge Voltage (Vpd): 1.669 kV peak (routine test) / 1.424 kV peak (lot test)
· Creepage/Clearance Distance: ≥ 7 mm (standard DIP-16) / ≥ 8 mm (400 mil DIP-16)
# TCET4600 Optocoupler Datasheet Summary
## Description
The TCET4600 is a quad-channel optocoupler with a phototransistor output and AC input, packaged in a 16-pin DIP. It uses gallium arsenide infrared-emitting diodes.
## Features
· Low coupling capacity (0.2 pF typical)
· High common mode rejection
· Low temperature coefficient of CTR
· High isolation voltages:
- Impulse Voltage (VIOTM): 10 kV peak
- Partial Discharge Voltage (Vpd): 1.6 kV peak
- Isolation Voltage (VIOWM): 600 VRMS
- Recurring Peak Voltage (VIORM): 890 Vpeak
· Minimum insulation thickness: ≥ 0.4 mm
· Creepage current resistance: CTI ≥ 175
· Agency Approvals: UL/cUL, DIN EN 60747-5-5 (VDE), FIMKO
## Absolute Maximum Ratings
· Forward Current (IF): ± 60 mA
· Collector Emitter Voltage (VCEO): 70 V
· Collector Current (IC): 50 mA
· Total Power Dissipation (Ptot): 250 mW
· Operating Temperature (Tamb): -55 to +100 °C
## Electrical Characteristics (Tamb = 25 °C)
· Forward Voltage (VF): 1.25 - 1.6 V (IF = ± 50 mA)
· Collector Dark Current (ICEO): ≤ 100 nA
· Collector Emitter Saturation Voltage (VCEsat): ≤ 0.3 V (IF = 10 mA, IC = 1 mA)
· Current Transfer Ratio (CTR): 20-300 % (VCE = 5V, IF = ± 5 mA)
## Package Dimensions
· DIP-16, 7.62 mm pitch
## Safety and Insulation Ratings
· Isolation Resistance (RIO): ≥ 10^12 Ω (VIO = 500 V, Tamb = 25°C)
· Partial Discharge Voltage (Vpd): 1.669 kV peak (routine test) / 1.424 kV peak (lot test)
· Creepage/Clearance Distance: ≥ 7 mm (standard DIP-16) / ≥ 8 mm (400 mil DIP-16)
| Part No. | TCET4600_V01 |
| Manufacturer | VISHAY |
| Size | 170 Kbytes |
| Pages | 8 pages |
| Description | Optocoupler, Phototransistor Output, AC Input (Quad Channel) |
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