# ISF1012 N-Channel MOSFET Transistor

## Features

️· Drain Current (ID): 139A @ TC = 25°C
️· Drain-Source Voltage (VDSS): 150V (min)
️· Static Drain-Source On-Resistance (RDS(on)): 5mΩ (max) @ VGS = 10V

## Absolute Maximum Ratings

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	150	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	139	A
IDM	Drain Current-Single Pluse	760	A
PD	Total Dissipation @TC=25℃	214	W
TJ	Max. Operating Junction Temperature	175	℃
Tstg	Storage Temperature	-55~175	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	0.7	℃/W

## Electrical Characteristics (TC=25°C unless specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID=0.25mA	150	--	V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 0.5mA	2.5	4.5	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 97A	--	5	mΩ
IGSS	Gate-Body Leakage Current	VGS= ±20V;VDS= 0	--	±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS= 150V; VGS= 0	--	1.0	uA
VSD	Forward On-Voltage	IS= 97A; VGS= 0	--	1.2	V

## Product Disclaimer

️· Intended for general electronic equipment.
️· Not designed for specialized quality/reliability equipment or hazardous environments.
️· Contact manufacturer for specific application requirements.
️· No warranty or liability assumed for application or use of product.