# Silicon NPN RF Power Transistor 2SC1972

## Description
· Collector-Emitter Breakdown Voltage: V(BR)CEO = 17V (Min)

## Applications
· Suitable for 10 to 14 Watt output power amplifiers in VHF band mobile radio applications.

## Absolute Maximum Ratings (Ta=25℃)
· VCBO: 35 V
· VCEO: 17 V
· VEBO: 4 V
· IC (Continuous Collector Current): 3.5 A
· PC (Total Power Dissipation): 1.5 W @ 25℃, 80 W @ 25℃ (TC)
· TJ (Junction Temperature): 175 ℃
· Tstg (Storage Temperature Range): -55 ~ 175 ℃

## Electrical Characteristics (TC=25℃ unless otherwise specified)
· V(BR)CBO: 35 V (IC=10mA, IE=0)
· V(BR)CEO: 17 V (IC=10mA, IB=0)

· V(BR)EBO: 4 V (IE=10mA, IC=0)
· ICBO (Collector Cutoff Current): ≤ 1 mA (VCB=25V, IE=0)
· IEBO (Emitter Cutoff Current): ≤ 0.5 mA (VEB=3V, IC=0)
· hFE (DC Current Gain): 10 – 180 (IC=0.1A, VCE=10V)
· VCE(sat) (Collector-Emitter Saturation Voltage): ≤ 3.0 V (IC=7.2A, IB=1.8A)

## Disclaimer
· ISC reserves the right to make changes without notification.
· Products are intended for general electronic equipment.
· Not designed for equipment requiring specialized quality/reliability or hazardous environments.
· ISC makes no warranty or assumes liability for product use.
· Unauthorized reproduction of this datasheet is prohibited.