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BSS63 Datasheet with Chat AI
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  • # Example questions: ➢ What is the typical operating junction temperature (tj) for the bss63 transistor?
    ➢ What are the physical dimensions of the sot-23 package, specifically the height (c) and length (d)?
    ➢ What is the maximum collector current (ic) this transistor can handle?

    • Part No.BSS63
    ManufacturerSTMICROELECTRONICS
    Size36 Kbytes
    Pages4 pages
    DescriptionSMALL SIGNAL PNP TRANSISTOR
    Datasheet Summary with AI

    # BSS63 Small Signal PNP Transistor

    ## Overview
    ️· Small signal PNP transistor in a SOT-23 plastic package.
    ️· Designed for surface mounting.
    ️· General purpose, low frequency applications.
    ️· NPN complement is BSS64.

    ## Absolute Maximum Ratings
    ️· V<sub>CBO</sub> (Collector-Base Voltage): -110 V
    ️· V<sub>CEO</sub> (Collector-Emitter Voltage): -100 V
    ️· V<sub>EBO</sub> (Emitter-Base Voltage): -6 V
    ️· I<sub>C</sub> (Collector Current): -0.1 A
    ️· I<sub>CM</sub> (Collector Peak Current): -0.2 A
    ️· P<sub>tot</sub> (Total Dissipation at Tc = 25°C): 200 mW
    ️· T<sub>stg</sub> (Storage Temperature): -65 to 150 °C
    ️· T<sub>j</sub> (Operating Junction Temperature): 150 °C

    ## Electrical Characteristics (Tcase = 25°C)
    ️· I<sub>CBO</sub> (Collector Cut-off Current): -100 nA (-90V), -50 µA (Tj = 150°C)
    ️· I<sub>EBO</sub> (Emitter Cut-off Current): -200 nA (-5V)
    ️· V<sub>(BR)CBO</sub> (Collector-Base Breakdown Voltage): -110 V (I<sub>C</sub> = -10 µA)
    ️· V<sub>(BR)CEO</sub> (Collector-Emitter Breakdown Voltage): -100 V (I<sub>B</sub> = 0)
    ️· V<sub>(BR)EBO</sub> (Emitter-Base Breakdown Voltage): -6 V (I<sub>C</sub> = 0)
    ️· V<sub>CE(sat)</sub> (Collector-Emitter Saturation Voltage): -0.25 V (I<sub>C</sub> = -25 mA, I<sub>B</sub> = -2.5 mA), -0.9 V (I<sub>C</sub> = -75 mA, I<sub>B</sub> = -7.5 mA)
    ️· V<sub>BE(sat)</sub> (Emitter-Base Saturation Voltage): -0.9 V (I<sub>C</sub> = -25 mA, I<sub>B</sub> = -2.5 mA)
    ️· h<sub>FE</sub> (DC Current Gain): 30 (I<sub>C</sub> = -10 mA, V<sub>CE</sub> = -1V), 30 (I<sub>C</sub> = -25 mA, V<sub>CE</sub> = -1V)
    ️· f<sub>T</sub> (Transition Frequency): 50 MHz (I<sub>C</sub> = -25 mA, V<sub>CE</sub> = -5 V)
    ️· C<sub>CB</sub> (Collector-Base Capacitance): 3 pF (V<sub>CB</sub> = -10V, f = 1 MHz)

    ## Mechanical Data (SOT-23)
    ️· Dimensions (mm):
    - A: 0.85 - 1.1
    - B: 0.65 - 0.95
    - C: 1.20 - 1.4
    - D: 2.80 - 3
    - E: 0.95 - 1.05
    - F: 1.9 - 2.05
    - G: 2.1 - 2.5
    - H: 0.38 - 0.48
    - L: 0.3 - 0.6
    - M: 0 - 0.1
    - N: 0.3 - 0.65
    - O: 0.09 - 0.17

    # BSS63 Small Signal PNP Transistor

    ## Overview
    ️· Small signal PNP transistor in a SOT-23 plastic package.
    ️· Designed for surface mounting.
    ️· General purpose, low frequency applications.
    ️· NPN complement is BSS64.

    ## Absolute Maximum Ratings
    ️· V<sub>CBO</sub> (Collector-Base Voltage): -110 V
    ️· V<sub>CEO</sub> (Collector-Emitter Voltage): -100 V
    ️· V<sub>EBO</sub> (Emitter-Base Voltage): -6 V
    ️· I<sub>C</sub> (Collector Current): -0.1 A
    ️· I<sub>CM</sub> (Collector Peak Current): -0.2 A
    ️· P<sub>tot</sub> (Total Dissipation at Tc = 25°C): 200 mW
    ️· T<sub>stg</sub> (Storage Temperature): -65 to 150 °C
    ️· T<sub>j</sub> (Operating Junction Temperature): 150 °C

    ## Electrical Characteristics (Tcase = 25°C)
    ️· I<sub>CBO</sub> (Collector Cut-off Current): -100 nA (-90V), -50 µA (Tj = 150°C)
    ️· I<sub>EBO</sub> (Emitter Cut-off Current): -200 nA (-5V)
    ️· V<sub>(BR)CBO</sub> (Collector-Base Breakdown Voltage): -110 V (I<sub>C</sub> = -10 µA)
    ️· V<sub>(BR)CEO</sub> (Collector-Emitter Breakdown Voltage): -100 V (I<sub>B</sub> = 0)
    ️· V<sub>(BR)EBO</sub> (Emitter-Base Breakdown Voltage): -6 V (I<sub>C</sub> = 0)
    ️· V<sub>CE(sat)</sub> (Collector-Emitter Saturation Voltage): -0.25 V (I<sub>C</sub> = -25 mA, I<sub>B</sub> = -2.5 mA), -0.9 V (I<sub>C</sub> = -75 mA, I<sub>B</sub> = -7.5 mA)
    ️· V<sub>BE(sat)</sub> (Emitter-Base Saturation Voltage): -0.9 V (I<sub>C</sub> = -25 mA, I<sub>B</sub> = -2.5 mA)
    ️· h<sub>FE</sub> (DC Current Gain): 30 (I<sub>C</sub> = -10 mA, V<sub>CE</sub> = -1V), 30 (I<sub>C</sub> = -25 mA, V<sub>CE</sub> = -1V)
    ️· f<sub>T</sub> (Transition Frequency): 50 MHz (I<sub>C</sub> = -25 mA, V<sub>CE</sub> = -5 V)
    ️· C<sub>CB</sub> (Collector-Base Capacitance): 3 pF (V<sub>CB</sub> = -10V, f = 1 MHz)

    ## Mechanical Data (SOT-23)
    ️· Dimensions (mm):
    - A: 0.85 - 1.1
    - B: 0.65 - 0.95
    - C: 1.20 - 1.4
    - D: 2.80 - 3
    - E: 0.95 - 1.05
    - F: 1.9 - 2.05
    - G: 2.1 - 2.5
    - H: 0.38 - 0.48
    - L: 0.3 - 0.6
    - M: 0 - 0.1
    - N: 0.3 - 0.65
    - O: 0.09 - 0.17

    Part No.BSS63
    ManufacturerSTMICROELECTRONICS
    Size36 Kbytes
    Pages4 pages
    DescriptionSMALL SIGNAL PNP TRANSISTOR
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