## BUL049 Datasheet Summary: STMicroelectronics BUL049 NPN Power Transistor

This document is a datasheet for the STMicroelectronics BUL049, a medium-power NPN bipolar junction transistor intended for switching and amplification applications. Here's a breakdown of the key information:

1. Key Features & Applications:

️· Type: NPN Bipolar Junction Transistor
️· Voltage: Up to 1050V (VCE)
️· Current: Up to 2A (IC)
️· Applications: Switching, amplification, and general-purpose applications.

2. Electrical Characteristics (Typical/Max values, Tcase = 25°C):

️· VCEO (Collector-Emitter Voltage): 400V - 450V
️· VBE(sat) (Base-Emitter Saturation Voltage): 1.1 - 1.5V
️· hFE (DC Current Gain): Ranges from 48-100 depending on IC (0.1A - 2A)
️· ICES (Collector Cut-off Current): 0.2 - 10 µA
️· ICEO (Collector Cut-off Current): 10 - 250 µA
️· VBE(off): 5V

3. Package:

️· TO-220 (Plastic)

4. Key Parameters/Performance:

️· Switching Speed: Demonstrated through storage and fall times (ts/tf) of 2.5µs/350ns
️· Avalanche Energy (Ear): 5mJ.

5. Important Notes:

️· The datasheet includes typical characteristic curves (output characteristics, DC gain, saturation voltages, etc.).
️· It specifies test circuits for switching tests and energy ratings.
️· It highlights the use of ECOPACK packaging for environmental compliance.

In essence, the BUL049 is a robust, medium-power NPN transistor suitable for a variety of applications where moderate voltage and current handling capabilities are required.