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Hello, Please ask a question about T620W Datasheet
# Example questions:
➢ What is the maximum repetitive peak off-state voltage (vdrm) available for the t620w triac?
➢ What is the typical gate trigger current (igt) for the t620w/630w when vdrm is applied, and rl is 3kω, at a junction temperature of 125°c?
➢ What is the maximum allowable lead temperature for soldering the t620w/630w for 10 seconds, measured 4.5mm from the case?
# T620W / 630W Triac Datasheet Summary
## Electrical Characteristics
️· ITRMS (RMS On-State Current): 6A (at Tc=100°C)
️· VDRM / VRRM (Repetitive Peak Off-State/Reverse Voltage): 400V, 600V, 700V options.
️· ITSM (Non-Repetitive Surge Peak On-State Current): 66A (tp=16.7ms, 60Hz), 75A (tp=10ms, 50Hz)
️· IGT (Gate Trigger Current): Max 20mA (Tj=25°C, I-II-III quadrant)
️· VGT (Gate Trigger Voltage): Max 1.5V (Tj=25°C, I-II-III quadrant)
️· dV/dt Critical Rate of Rise: Min 200 V/µs (Tj=125°C)
️· Holding Current (IH): Max 50mA (Tj=25°C)
## Thermal Characteristics
️· Rth(j-a) (Junction-to-Ambient Thermal Resistance): 50°C/W
️· Rth(j-c) (Junction-to-Case Thermal Resistance): 3.4°C/W
️· Tj (Operating Junction Temperature): -40°C to +125°C
️· Tstg (Storage Temperature Range): -40°C to +150°C
️· Tl (Lead Temperature for Soldering): 260°C (for 10s at 4.5mm from case)
## Features
️· Snubberless design (suppresses R-C network)
️· Suitable for phase control and static switching on inductive/resistive loads
️· High performance glass passivated chip technology
️· U.L. Recognized (E81734)
️· Insulating Voltage: 1500V (RMS)
## Package Information
️· Package Type: ISOWATT220AB (Plastic)
️· Weight: 2.1g
️· Recommended Torque: 0.55 m.N
️· Maximum Torque: 0.70 m.N
## Key Performance Metrics
️· I2t Value (half-cycle, 50Hz, tp=10ms): 28 A²s
️· Critical Rate of Rise of On-State Current (dI/dt): 20 A/µs (Repetitive), 100A/µs (Non-Repetitive)
️· Gate Power Dissipation (PGM): 10W (tp=20µs)
️· Gate Trigger Current (IGM): 4A (tp=20µs)
️· VTM (On-State Voltage): Max 1.5V (ITM = 8.5A)
# T620W / 630W Triac Datasheet Summary
## Electrical Characteristics
️· ITRMS (RMS On-State Current): 6A (at Tc=100°C)
️· VDRM / VRRM (Repetitive Peak Off-State/Reverse Voltage): 400V, 600V, 700V options.
️· ITSM (Non-Repetitive Surge Peak On-State Current): 66A (tp=16.7ms, 60Hz), 75A (tp=10ms, 50Hz)
️· IGT (Gate Trigger Current): Max 20mA (Tj=25°C, I-II-III quadrant)
️· VGT (Gate Trigger Voltage): Max 1.5V (Tj=25°C, I-II-III quadrant)
️· dV/dt Critical Rate of Rise: Min 200 V/µs (Tj=125°C)
️· Holding Current (IH): Max 50mA (Tj=25°C)
## Thermal Characteristics
️· Rth(j-a) (Junction-to-Ambient Thermal Resistance): 50°C/W
️· Rth(j-c) (Junction-to-Case Thermal Resistance): 3.4°C/W
️· Tj (Operating Junction Temperature): -40°C to +125°C
️· Tstg (Storage Temperature Range): -40°C to +150°C
️· Tl (Lead Temperature for Soldering): 260°C (for 10s at 4.5mm from case)
## Features
️· Snubberless design (suppresses R-C network)
️· Suitable for phase control and static switching on inductive/resistive loads
️· High performance glass passivated chip technology
️· U.L. Recognized (E81734)
️· Insulating Voltage: 1500V (RMS)
## Package Information
️· Package Type: ISOWATT220AB (Plastic)
️· Weight: 2.1g
️· Recommended Torque: 0.55 m.N
️· Maximum Torque: 0.70 m.N
## Key Performance Metrics
️· I2t Value (half-cycle, 50Hz, tp=10ms): 28 A²s
️· Critical Rate of Rise of On-State Current (dI/dt): 20 A/µs (Repetitive), 100A/µs (Non-Repetitive)
️· Gate Power Dissipation (PGM): 10W (tp=20µs)
️· Gate Trigger Current (IGM): 4A (tp=20µs)
️· VTM (On-State Voltage): Max 1.5V (ITM = 8.5A)
| Part No. | T620W |
| Manufacturer | STMICROELECTRONICS |
| Size | 62 Kbytes |
| Pages | 5 pages |
| Description | SNUBBERLESS TRIAC |
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