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WS27C256L Datasheet with Chat AI
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  • # Example questions: ➢ What is the typical input capacitance (cin) of the device, and under what voltage condition is this value specified?
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  • Part No.WS27C256L
    ManufacturerSTMICROELECTRONICS
    Size48 Kbytes
    Pages5 pages
    DescriptionMilitary 32K x 8 CMOS EPROM
    Datasheet Summary with AI

    Document Focus: This excerpt details the AC and DC characteristics of a memory device (likely a static RAM or similar) designated by the model number *WS013A-16*. It provides timing parameters, capacitance values, and testing conditions.

    1. Input/Output Logic Levels:

    ️· V<sub>IH</sub> (High-Level Input Voltage): 2.0V - 2.4V
    ️· V<sub>IL</sub> (Low-Level Input Voltage): 0.4V
    ️· V<sub>OH</sub> (High-Level Output Voltage): 2.0V
    ️· V<sub>OL</sub> (Low-Level Output Voltage): 0.8V

    2. Key Timing Parameters (AC Characteristics): These specify how fast the device can respond. Several parameters are listed, including:

    ️· t<sub>OH</sub>: Output Hold Time
    ️· t<sub>OCX</sub>: (Information missing in the extract, but it's a timing parameter.)
    ️· t<sub>ACC</sub> (Not shown): Access Time. (likely found elsewhere in the datasheet)

    3. Capacitance Values:

    ️· C<sub>IN</sub> (Input Capacitance): 4-6 pF
    ️· C<sub>OUT</sub> (Output Capacitance): 8-12 pF
    ️· C<sub>VPP</sub> (VPP Capacitance): 18-25 pF

    4. Test Conditions:

    ️· Test Load: 100 pF (including scope and jig capacitance) in parallel with 820Ω resistor.
    ️· Supply Voltage: 2.01 V
    ️· Input Drive: 2.4V for logic '1', 0.4V for logic '0'.
    ️· Measurements: Made at 2.0 V for logic '1' and 0.8 V for logic '0'.

    5. Important Notes:

    ️· Decoupling Capacitance: The datasheet *strongly* recommends using decoupling capacitors (0.1 µF in parallel with 0.01 µF) as close as possible to the device. This is crucial for achieving published performance and preventing access time degradation or transient failures.
    ️· Sampling: Some parameters are “only sampled and not 100% tested.”

    6. Documentation Structure:

    ️· The excerpt presents data in tables for easy reference.
    ️· Multiple Columns repeat the same information.

    In summary, this excerpt provides crucial timing and electrical characteristics necessary for properly interfacing with and designing systems around the memory device WS013A-16. It highlights the importance of proper power supply decoupling and adherence to specified test conditions.

    Document Focus: This excerpt details the AC and DC characteristics of a memory device (likely a static RAM or similar) designated by the model number *WS013A-16*. It provides timing parameters, capacitance values, and testing conditions.

    1. Input/Output Logic Levels:

    ️· V<sub>IH</sub> (High-Level Input Voltage): 2.0V - 2.4V
    ️· V<sub>IL</sub> (Low-Level Input Voltage): 0.4V
    ️· V<sub>OH</sub> (High-Level Output Voltage): 2.0V
    ️· V<sub>OL</sub> (Low-Level Output Voltage): 0.8V

    2. Key Timing Parameters (AC Characteristics): These specify how fast the device can respond. Several parameters are listed, including:

    ️· t<sub>OH</sub>: Output Hold Time
    ️· t<sub>OCX</sub>: (Information missing in the extract, but it's a timing parameter.)
    ️· t<sub>ACC</sub> (Not shown): Access Time. (likely found elsewhere in the datasheet)

    3. Capacitance Values:

    ️· C<sub>IN</sub> (Input Capacitance): 4-6 pF
    ️· C<sub>OUT</sub> (Output Capacitance): 8-12 pF
    ️· C<sub>VPP</sub> (VPP Capacitance): 18-25 pF

    4. Test Conditions:

    ️· Test Load: 100 pF (including scope and jig capacitance) in parallel with 820Ω resistor.
    ️· Supply Voltage: 2.01 V
    ️· Input Drive: 2.4V for logic '1', 0.4V for logic '0'.
    ️· Measurements: Made at 2.0 V for logic '1' and 0.8 V for logic '0'.

    5. Important Notes:

    ️· Decoupling Capacitance: The datasheet *strongly* recommends using decoupling capacitors (0.1 µF in parallel with 0.01 µF) as close as possible to the device. This is crucial for achieving published performance and preventing access time degradation or transient failures.
    ️· Sampling: Some parameters are “only sampled and not 100% tested.”

    6. Documentation Structure:

    ️· The excerpt presents data in tables for easy reference.
    ️· Multiple Columns repeat the same information.

    In summary, this excerpt provides crucial timing and electrical characteristics necessary for properly interfacing with and designing systems around the memory device WS013A-16. It highlights the importance of proper power supply decoupling and adherence to specified test conditions.

    Part No.WS27C256L
    ManufacturerSTMICROELECTRONICS
    Size48 Kbytes
    Pages5 pages
    DescriptionMilitary 32K x 8 CMOS EPROM
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