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Hello, Please ask a question about WS57C256F Datasheet
# Example questions:
➢ Which package types are available for the ws57c256f-55 and what is the operating temperature range for those packages?
➢ What is the difference in address access time between the ws57c256f-55 and the ws57c256f-70?
➢ How much current does the ws57c256f consume while cycling at full speed in a ttl environment?
# WS57C256F CMOS EPROM
## Key Features
️· High-performance 256K UV erasable electrically programmable read-only memory.
️· Fast access time: 55ns or 70ns.
️· Low power consumption: < 120mA cycling, < 5mA standby (TTL), < 500µA standby (CMOS).
️· Standard EPROM pinout for easy upgrade.
️· Latch-up immunity up to 200mA.
️· Output drive: 4mA source, 16mA sink.
️· DESC SMD No. 5962-86063
## General Specifications
️· Memory Size: 32K x 8
️· Technology: CMOS
️· Erasure: UV
️· Operating Temperature: Military grade
## Mode Selection
️· Read: VIL (CE, OE), X (A9, A0), VCC (VPP, VCC) - DOUT
️· Output Disable: X (CE), VIH (OE), X (A9, A0), VCC (VPP, VCC) - High Z
️· Standby: VIH (CE), X (OE), X (A9, A0), VCC (VPP, VCC) - High Z
️· Program/Verify: VIL/X (CE), VIH/VIL (OE), X (A9, A0), VPP (VPP), VCC (VCC) – DIN/DOUT
️· Program Inhibit: VIH (CE, OE), X (A9, A0), VPP (VPP), VCC (VCC) - High Z
## Ordering Information
️· WS57C256F-55CMB: 55ns, 32 Pad CLLCC
️· WS57C256F-55DMB: 55ns, 28 Pin CERDIP, 0.6"
️· WS57C256F-55TMB: 55ns, 28 Pin CERDIP, 0.3"
️· WS57C256F-70CMB: 70ns, 32 Pad CLLCC
️· WS57C256F-70DMB: 70ns, 28 Pin CERDIP, 0.6"
## Programming
️· Programmed using Algorithm D (see page 5-9).
️· Refer to page 5-1 for programming/algorithm details.
️· Complete data sheet and electrical specifications on page 3-13.
# WS57C256F CMOS EPROM
## Key Features
️· High-performance 256K UV erasable electrically programmable read-only memory.
️· Fast access time: 55ns or 70ns.
️· Low power consumption: < 120mA cycling, < 5mA standby (TTL), < 500µA standby (CMOS).
️· Standard EPROM pinout for easy upgrade.
️· Latch-up immunity up to 200mA.
️· Output drive: 4mA source, 16mA sink.
️· DESC SMD No. 5962-86063
## General Specifications
️· Memory Size: 32K x 8
️· Technology: CMOS
️· Erasure: UV
️· Operating Temperature: Military grade
## Mode Selection
️· Read: VIL (CE, OE), X (A9, A0), VCC (VPP, VCC) - DOUT
️· Output Disable: X (CE), VIH (OE), X (A9, A0), VCC (VPP, VCC) - High Z
️· Standby: VIH (CE), X (OE), X (A9, A0), VCC (VPP, VCC) - High Z
️· Program/Verify: VIL/X (CE), VIH/VIL (OE), X (A9, A0), VPP (VPP), VCC (VCC) – DIN/DOUT
️· Program Inhibit: VIH (CE, OE), X (A9, A0), VPP (VPP), VCC (VCC) - High Z
## Ordering Information
️· WS57C256F-55CMB: 55ns, 32 Pad CLLCC
️· WS57C256F-55DMB: 55ns, 28 Pin CERDIP, 0.6"
️· WS57C256F-55TMB: 55ns, 28 Pin CERDIP, 0.3"
️· WS57C256F-70CMB: 70ns, 32 Pad CLLCC
️· WS57C256F-70DMB: 70ns, 28 Pin CERDIP, 0.6"
## Programming
️· Programmed using Algorithm D (see page 5-9).
️· Refer to page 5-1 for programming/algorithm details.
️· Complete data sheet and electrical specifications on page 3-13.
| Part No. | WS57C256F |
| Manufacturer | STMICROELECTRONICS |
| Size | 19 Kbytes |
| Pages | 2 pages |
| Description | MILITARY HIGH SPEED 32K x 8 CMOS EPROM |
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