# Silicon NPN Power Transistors 2SC3230

## Description

· TO-220 package
· Complement to 2SA1276
· Good linearity of hFE

## Applications

· General purpose
· Cordless telephone final amplifier (1.7MHz system)

## Pinning

Pin	Description
1	Base
2	Collector; connected to mounting base
3	Emitter

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	Open emitter	30	V
VCEO	Collector-emitter voltage	Open base	30	V
VEBO	Emitter-base voltage	Open collector	5	V
IC	Collector current		3	A
IE	Emitter current		-3	A
PC	Collector power dissipation	TC=25℃	10	W
Tj	Junction temperature		150	℃
Tstg	Storage temperature		-55~150	℃

## Characteristics (Tj=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-emitter breakdown voltage	IC=10mA; IB=0	30			V
V(BR)EBO	Emitter-base breakdown voltage	IE=1mA; IC=0	5			V
VCE(sat)	Collector-emitter saturation voltage	IC=2A; IB=0.2 A		0.3	0.8	V
VBE	Base-emitter on voltage	IC=0.5A; VCE=2V		0.75	1.0	V
ICBO	Collector cut-off current	VCB=20V; IE=0			1.0	μA
IEBO	Emitter cut-off current	VEB=5V; IC=0			1.0	μA
hFE-1	DC current gain	IC=0.5A; VCE=2V	70		240
hFE-2	DC current gain	IC=2.5A; VCE=2V	25
COB	Collector output capacitance	IE=0; VCB=10V,f=1MHz		35		pF
fT	Transition frequency	IC=0.5A; VCE=2V		100		MHz

## hFE-1 Classifications

O	Y
70-140	120-240

## Package Outline

· Figure 1 depicts outline dimensions (tolerance ±0.10mm)