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2SC3231 Datasheet with Chat AI
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  • # Example questions: ➢ What is the maximum collector current (dc) that the 2sc3231 can handle?
    ➢ How does the junction temperature (tj) affect the maximum allowable power dissipation (pc)?
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  • Part No.2SC3231
    ManufacturerISC
    Size56 Kbytes
    Pages3 pages
    DescriptionSilicon NPN Power Transistors
    Datasheet Summary with AI

    # Silicon NPN Power Transistor 2SC3231

    ## Description
    · TO-220 package
    · Wide area of safe operation

    ## Applications
    · Switching regulators
    · General purpose power amplifiers
    · TV horizontal output applications

    ## Pinning
    · Pin 1: Base
    · Pin 2: Collector (connected to mounting base)
    · Pin 3: Emitter

    ## Absolute Maximum Ratings (Ta=25℃)
    · VCBO (Collector-base voltage): 200 V
    · VCEO (Collector-emitter voltage): 150 V
    · VEBO (Emitter-base voltage): 7 V

    · IC (Collector current): 4 A
    · PC (Collector power dissipation): 40 W
    · Tj (Junction temperature): 150 ℃
    · Tstg (Storage temperature): -55~150 ℃

    ## Characteristics (Tj=25℃ unless otherwise specified)
    · V(BR)CEO (Collector-emitter breakdown voltage): 150 V
    · V(BR)CBO (Collector-base breakdown voltage): 200 V
    · V(BR)EBO (Emitter-base breakdown voltage): 7 V
    · VCEsat (Collector-emitter saturation voltage): ≤ 1.0 V (IC=4A; IB=0.4A)
    · ICBO (Collector cut-off current): ≤ 100 μA (VCB=200V; IE=0)
    · IEBO (Emitter cut-off current): ≤ 100 μA (VEB=7V; IC=0)
    · hFE (DC current gain): 30 - 150 (IC=1A; VCE=5V)
    · fT (Transition frequency): 8 MHz (IC=0.5A; VCE=5V)

    ## Package
    · TO-220 package
    · Outline dimensions tolerance: ±0.10 mm

    # Silicon NPN Power Transistor 2SC3231

    ## Description
    · TO-220 package
    · Wide area of safe operation

    ## Applications
    · Switching regulators
    · General purpose power amplifiers
    · TV horizontal output applications

    ## Pinning
    · Pin 1: Base
    · Pin 2: Collector (connected to mounting base)
    · Pin 3: Emitter

    ## Absolute Maximum Ratings (Ta=25℃)
    · VCBO (Collector-base voltage): 200 V
    · VCEO (Collector-emitter voltage): 150 V
    · VEBO (Emitter-base voltage): 7 V
    · IC (Collector current): 4 A
    · PC (Collector power dissipation): 40 W
    · Tj (Junction temperature): 150 ℃
    · Tstg (Storage temperature): -55~150 ℃

    ## Characteristics (Tj=25℃ unless otherwise specified)
    · V(BR)CEO (Collector-emitter breakdown voltage): 150 V
    · V(BR)CBO (Collector-base breakdown voltage): 200 V
    · V(BR)EBO (Emitter-base breakdown voltage): 7 V
    · VCEsat (Collector-emitter saturation voltage): ≤ 1.0 V (IC=4A; IB=0.4A)
    · ICBO (Collector cut-off current): ≤ 100 μA (VCB=200V; IE=0)
    · IEBO (Emitter cut-off current): ≤ 100 μA (VEB=7V; IC=0)
    · hFE (DC current gain): 30 - 150 (IC=1A; VCE=5V)
    · fT (Transition frequency): 8 MHz (IC=0.5A; VCE=5V)

    ## Package
    · TO-220 package
    · Outline dimensions tolerance: ±0.10 mm

    Part No.2SC3231
    ManufacturerISC
    Size56 Kbytes
    Pages3 pages
    DescriptionSilicon NPN Power Transistors
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