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Hello, Please ask a question about 2SC3231 Datasheet
# Example questions:
➢ What is the maximum collector current (dc) that the 2sc3231 can handle?
➢ How does the junction temperature (tj) affect the maximum allowable power dissipation (pc)?
➢ What are the typical and maximum values for the dc current gain (hfe) when the collector current is 1a and the collector-emitter voltage is 5v?
# Silicon NPN Power Transistor 2SC3231
## Description
· TO-220 package
· Wide area of safe operation
## Applications
· Switching regulators
· General purpose power amplifiers
· TV horizontal output applications
## Pinning
· Pin 1: Base
· Pin 2: Collector (connected to mounting base)
· Pin 3: Emitter
## Absolute Maximum Ratings (Ta=25℃)
· VCBO (Collector-base voltage): 200 V
· VCEO (Collector-emitter voltage): 150 V
· VEBO (Emitter-base voltage): 7 V
· IC (Collector current): 4 A
· PC (Collector power dissipation): 40 W
· Tj (Junction temperature): 150 ℃
· Tstg (Storage temperature): -55~150 ℃
## Characteristics (Tj=25℃ unless otherwise specified)
· V(BR)CEO (Collector-emitter breakdown voltage): 150 V
· V(BR)CBO (Collector-base breakdown voltage): 200 V
· V(BR)EBO (Emitter-base breakdown voltage): 7 V
· VCEsat (Collector-emitter saturation voltage): ≤ 1.0 V (IC=4A; IB=0.4A)
· ICBO (Collector cut-off current): ≤ 100 μA (VCB=200V; IE=0)
· IEBO (Emitter cut-off current): ≤ 100 μA (VEB=7V; IC=0)
· hFE (DC current gain): 30 - 150 (IC=1A; VCE=5V)
· fT (Transition frequency): 8 MHz (IC=0.5A; VCE=5V)
## Package
· TO-220 package
· Outline dimensions tolerance: ±0.10 mm
# Silicon NPN Power Transistor 2SC3231
## Description
· TO-220 package
· Wide area of safe operation
## Applications
· Switching regulators
· General purpose power amplifiers
· TV horizontal output applications
## Pinning
· Pin 1: Base
· Pin 2: Collector (connected to mounting base)
· Pin 3: Emitter
## Absolute Maximum Ratings (Ta=25℃)
· VCBO (Collector-base voltage): 200 V
· VCEO (Collector-emitter voltage): 150 V
· VEBO (Emitter-base voltage): 7 V
· IC (Collector current): 4 A
· PC (Collector power dissipation): 40 W
· Tj (Junction temperature): 150 ℃
· Tstg (Storage temperature): -55~150 ℃
## Characteristics (Tj=25℃ unless otherwise specified)
· V(BR)CEO (Collector-emitter breakdown voltage): 150 V
· V(BR)CBO (Collector-base breakdown voltage): 200 V
· V(BR)EBO (Emitter-base breakdown voltage): 7 V
· VCEsat (Collector-emitter saturation voltage): ≤ 1.0 V (IC=4A; IB=0.4A)
· ICBO (Collector cut-off current): ≤ 100 μA (VCB=200V; IE=0)
· IEBO (Emitter cut-off current): ≤ 100 μA (VEB=7V; IC=0)
· hFE (DC current gain): 30 - 150 (IC=1A; VCE=5V)
· fT (Transition frequency): 8 MHz (IC=0.5A; VCE=5V)
## Package
· TO-220 package
· Outline dimensions tolerance: ±0.10 mm
| Part No. | 2SC3231 |
| Manufacturer | ISC |
| Size | 56 Kbytes |
| Pages | 3 pages |
| Description | Silicon NPN Power Transistors |
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