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Part No.	2SC3235
Manufacturer	ISC
Size	57 Kbytes
Pages	3 pages
Description	Silicon NPN Power Transistors

Datasheet Summary with AI

# Silicon NPN Power Transistor 2SC3235

## Description

· TO-220 package
· High voltage, high speed
· Low saturation voltage

## Applications

· High voltage, high speed, and high power switching applications

## Pinning

· 1: Base
· 2: Collector (connected to mounting base)
· 3: Emitter

## Absolute Maximum Ratings (Ta=25°C)

· VCBO (Collector-base voltage): 500 V
· VCEO (Collector-emitter voltage): 400 V
· VEBO (Emitter-base voltage): 7 V
· IC (Collector current): 2 A
· ICM (Collector current - Peak): 4 A
· PC (Collector power dissipation): 20 W
· Tj (Junction temperature): 150 °C
· Tstg (Storage temperature): -55 ~ 150 °C

## Characteristics (Tj=25°C unless otherwise specified)

· V(BR)CEO (Collector-emitter breakdown voltage): 400 V
· V(BR)CBO (Collector-base breakdown voltage): 500 V
· V(BR)EBO (Emitter-base breakdown voltage): 7 V
· VCEsat (Collector-emitter saturation voltage): 1.0 V (IC=1A, IB=0.2 A)
· VBEsat (Base-emitter saturation voltage): 1.5 V (IC=1A, IB=0.2 A)
· ICBO (Collector cut-off current): 10 μA (VCB=400V, IE=0)
· IEBO (Emitter cut-off current): 10 μA (VEB=5V, IC=0)
· hFE (DC current gain): 20-50 (IC=0.1A, VCE=5V)

## Package Outline

· TO-220 package
· Dimensions in Fig. 2 (tolerance: ±0.10 mm)