# 2SC4849 Silicon NPN Power Transistor

## Description
· TO-220Fa package
· Low collector saturation voltage
· High switching speed
· Wide safe operating area
· Intended for power supply applications

## Pinning
· Pin 1: Base
· Pin 2: Collector
· Pin 3: Emitter

## Absolute Maximum Ratings (Ta=25°C)
· VCBO (Collector-base voltage): 250V
· VCEO (Collector-emitter voltage): 120V
· VEBO (Emitter-base voltage): 12V
· IC (Collector current, DC): 7A
· ICM (Collector current, Peak): 15A (at Ta=2°C)
· PC (Collector power dissipation): 2W (at Ta=25°C), 30W (at TC=25°C)
· Tj (Junction temperature): 150°C
· Tstg (Storage temperature): -55°C to 150°C

## Characteristics (Tj=25°C unless otherwise specified)
· VCEO(SUS) (Collector-emitter sustaining voltage): 120V
· VCEsat (Collector-emitter saturation voltage): 0.6V (IC=5A, IB=0.5A)
· VBEsat (Base-emitter saturation voltage): 1.2V (IC=5A, IB=0.5A)
· ICBO (Collector cut-off current): 10μA (VCB=100V, IE=0)
· IEBO (Emitter cut-off current): 10μA (VEB=12V, IC=0)
· hFE (DC current gain): 100-200 (IC=3A, VCE=5V)
· fT (Transition frequency): 20 MHz (IC=0.5A, VCE=10V)
· Cob (Collector output capacitance): 150 pF (f=1MHz, VCB=10V)

## Switching Times
· ton (Turn-on time): 0.5 μs (IC=5A, IB1=0.5A, IB2=-0.5A, VCC≈50V, RL=10Ω)
· ts (Storage time): 2.5 μs
· tf (Fall time): 0.5 μs

## Package Outline
· TO-220Fa package
· Outline dimensions with tolerance of ±0.15 mm