# SFT4100 Series NPN Transistor

## Features
️· High-speed switching
️· Low leakage and saturation
️· BVCEO 165 Volts (min)
️· High linear gain
️· 200ºC Operating Temperature
️· Gold Eutectic Die Attach
️· Available in hermetic and “hot case” packages
️· Higher current devices available

## Maximum Ratings
️· Collector-Emitter Voltage (VCEO): 165V
️· Collector-Base Voltage (VCBO): 250V
️· Emitter-Base Voltage (VEBO): 7V
️· Continuous Collector Current (IC): 15A
️· Base Current (IB): 3A
️· Power Dissipation (PD @ TC = 25ºC): 120W
️· Operating & Storage Temperature (Top & Tstg): -65 to +200ºC

️· Thermal Resistance (RθJC): 1.46 ºC/W

## Electrical Characteristics (typical @25ºC)
️· BVCEO: 165-200V (IC = 200mA)
️· BVCBO: 250V (IC = 200µA)
️· BVEBO: 7-15V (IE = 50mA)
️· ICEO: 0.03-1000µA (VCE = 160V)
️· ICEX: 0.01-1A (VCE = 250V, VEB = 1.5V, TC = 125ºC)
️· IEBO: 0.01-1000µA (VEB = 5V)
️· hFE: 15-45 (VCE = 4V, IC = 5A), 8-30 (VCE = 4V, IC = 8A)
️· VCE(Sat): 0.25-1.2V (IC = 5A, IB = 500mA), 0.35-1.6V (IC = 8A, IB = 1A)
️· VBE(Sat): 1.12-2V (IC = 8A, IB = 1A)
️· fT: 8-20MHz (VCE = 15V, IC = 1A, f = 10MHz)

## Package Options
️· TO-3
️· SMD1
️· TO-254