# 2SC2073 Silicon NPN Power Transistor

## Description
· Collector-Emitter Breakdown Voltage: V(BR)CEO = 150V (Min)
· Wide Area of Safe Operation
· Complement to Type 2SA940

## Applications
· Power amplifier applications.
· Vertical output applications.

## Absolute Maximum Ratings (Ta = 25℃)
· VCBO (Collector-Base Voltage): 150 V
· VCEO (Collector-Emitter Voltage): 150 V
· VEBO (Emitter-Base Voltage): 5 V
· IC (Collector Current-Continuous): 1.5 A
· IB (Base Current-Continuous): 0.5 A
· PC (Collector Power Dissipation) @ Ta=25℃: 1.5 W
· PC (Collector Power Dissipation) @ TC=25℃: 25 W
· TJ (Junction Temperature): 150 ℃

· Tstg (Storage Temperature Range): -55~150 ℃

## Electrical Characteristics (TC=25℃ unless otherwise specified)
· VCE(sat) (Collector-Emitter Saturation Voltage): 1.5 V (IC= 500mA; IB= 50mA)
· VBE(on) (Base-Emitter On Voltage): 0.85 V (IC= 500mA ; VCE= 10V)
· ICBO (Collector Cutoff Current): 10 μA (VCB= 120V ; IE= 0)
· IEBO (Emitter Cutoff Current): 10 μA (VEB= 5V; IC= 0)
· hFE (DC Current Gain): 40-140 (IC= 500mA ; VCE= 10V)
· COB (Output Capacitance): 35 pF (IE= 0; VCB= 10V; ftest= 1MHz)
· fT (Current-Gain—Bandwidth Product): 4 MHz (IC= 500mA; VCE= 10V)

## Website
· www.iscsemi.cn