# BUV37 Silicon NPN Power Transistor

## Description

· Designed for automotive ignition circuits.
· Collector-Emitter Sustaining Voltage: V CEO(SUS) = 400V(Min.)
· Low Collector Saturation Voltage: V CE(sat) = 2.0V(Max.)@ I C = 10A

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	600	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	8	V
IC	Collector Current - Continuous	15	A
ICM	Collector Current - Peak	30	A
IB	Base Current - Continuous	4	A
PC	Collector Power Dissipation @TC=25℃	100	W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature Range	-65~150	℃

## Thermal Characteristics

· Rth j-c (Thermal Resistance, Junction to Case): 1.25 ℃/W

## Electrical Characteristics (TC=25℃)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 5A; IB= 0; L= 15mH	400			V
VCE(sat)-1	Collector-Emitter Saturation Voltage	IC= 7 A; IB= 70mA			1.5	V
VCE(sat)-2	Collector-Emitter Saturation Voltage	IC= 10 A; IB= 150mA			2.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 10 A; IB= 150mA			2.7	V
ICEO	Collector Cutoff Current	VCE= 400V; IB= 0			0.25	mA
IEBO	Emitter Cutoff Current	VEB= 6V; IC= 0			40	mA
hFE	DC Current Gain	IC= 15A; VCE= 5V	20

## Website

· www.iscsemi.cn