KSMB540 / Kersemi Electronic Co., Ltd. - データシート(PDF) Chat AI

KSMB540 Datasheet with Chat AI

Hello, Please ask a question about KSMB540 Datasheet

# Example questions: ➢ What is the typical value for the gate-source threshold voltage (vgs(th)) and what does this parameter signify?
➢ What is the maximum continuous drain current this mosfet can handle at a case temperature of 100°c?
➢ How does the thermal resistance from junction to case (rθjc) affect the device's heat dissipation capabilities?

Part No.	KSMB540
Manufacturer	KERSEMI
Size	660 Kbytes
Pages	4 pages
Description	Green device available.

Datasheet Summary with AI

# KSMB540 N-channel MOSFET

## Description
An N-channel MOSFET utilizing advanced trench technology, designed for low gate charge and wide application versatility.

## Features
️· Low gate charge
️· Green device available
️· Advanced high-density trench technology for low RDS(ON)
️· Excellent package for heat dissipation

## Absolute Maximum Ratings
️· VDS (Drain-Source Voltage): 100V
️· VGS (Gate-Source Voltage): ±20V
️· ID (Continuous Drain Current): 28A (at 25°C), 20A (at 100°C)
️· Pulsed Drain Current: 110A
️· EAS (Single Pulse Avalanche Energy): 230 mJ
️· PD (Power Dissipation): 150 W
️· TJ, TSTG (Operating/Storage Junction Temperature): -55°C to +175°C

## Thermal Characteristics
️· RƟJC (Junction-to-Case Thermal Resistance): 62 ℃/W
️· RƟJA (Junction-to-Ambient Thermal Resistance): 1.0

## Electrical Characteristics
️· BVDSS (Drain-Source Breakdown Voltage): 100V
️· RDS(ON) (Drain-Source On Resistance): 0.077Ω (at VDS=10V, ID=6A)
️· VGS(th) (Gate-Source Threshold Voltage): 2.0 - 4.0 V
️· Qg (Total Gate Charge): 72 nC
️· VSD (Source-Drain Diode Forward Voltage): 2.5 V

## Package and Ordering Information
️· Part No.: KSMB540
️· Marking: KSMB540
️· Package: TO-263

## Key Parameters

Parameter Conditions Min Typ Max Units

VDS Drain-Source Voltage 100 V

VGS Gate-Source Voltage ±20 V

ID Continuous Drain Current-1 28 A

ID Continuous Drain Current-T=100℃ 20 A

EAS Single Pulse Avalanche Energy 230 mJ

PD Power Dissipation 150 W

TJ, TSTG Operating and Storage Junction Temperature -55 to +175 ℃

Parameter	Conditions	Min	Typ
VDS	Drain-Source Voltage	100	V
VGS	Gate-Source Voltage	±20	V
ID	Continuous Drain Current-1	28	A
ID	Continuous Drain Current-T=100℃	20	A
EAS	Single Pulse Avalanche Energy	230	mJ
PD	Power Dissipation	150	W
TJ, TSTG	Operating and Storage Junction Temperature	-55 to +175	℃