# KSMU3607: 75V N-channel MOSFET

## Description

️· Advanced trench technology MOSFET
️· Designed for a wide variety of applications
️· Green device available

## Features

️· Low gate charge
️· Ultra RDS(ON) due to high-density trench technology
️· Excellent package for heat dissipation

## Absolute Maximum Ratings

️· VDS (Drain-Source Voltage): 75V
️· VGS (Gate-Source Voltage): ±20V
️· ID (Continuous Drain Current): 80A @ 25°C, 56A @ 100°C
️· Pulsed Drain Current: 310A
️· EAS (Single Pulse Avalanche Energy): 14 mJ
️· PD (Power Dissipation): 140 W
️· TJ/TSTG (Junction/Storage Temperature): -55°C to +175°C

## Thermal Characteristics

️· RƟJC (Junction-to-Case Thermal Resistance): 1.05 °C/W
️· RƟJA (Junction-to-Ambient Thermal Resistance): 110 °C/W

## Electrical Characteristics

️· Off Characteristics:
- BVDSS (Drain-Source Breakdown Voltage): 75V
- IDSS (Zero Gate Voltage Drain Current): 20μA
- IGSS (Gate-Source Leakage Current): ±100nA
- VGS(th) (Gate-Source Threshold Voltage): 2.0-4.0 V
️· On Characteristics:
- RDS(ON) (Drain-Source On Resistance): 7.34-9.0 MΩ @ VDS=10V, ID=6A
- GFS (Forward Transconductance): 170 S @ VDS=5V, ID=12A
️· Dynamic Characteristics:
- Ciss (Input Capacitance): 3070 pF
- Coss (Output Capacitance): 280 pF
- Crss (Reverse Transfer Capacitance): 130 pF
️· Switching Characteristics:
- td(on) (Turn-On Delay Time): 16 ns
- tr (Rise Time): 110 ns
- td(off) (Turn-Off Delay Time): 43 ns
- tf (Fall Time): 96 ns
- Qg (Total Gate Charge): 56-84 nC
️· Drain-Source Diode Characteristics:
- VSD (Source-Drain Diode Forward Voltage): 1.3 V @ VGS=0V, IS =1A
- trr (Reverse Recovery Time): 33-50 ns
- Qrr (Reverse Recovery Charge): 32-48 nC

## Package Information

️· Part NO: KSMU3607
️· Marking: KSMU3607
️· Package Type: TO-251

## Notes

️· Data tested on a 1 inch² FR-4 board with 2OZ copper.
️· Data tested with pulse width ≤300us and duty cycle ≤2%.
️· Power dissipation limited by a 150°C junction temperature.