| メーカー | 部品番号 | データシート | 部品情報 |
E-Tech Electronics LTD
|
LR1101 |
707Kb/8P |
100mA, 4關A QUIESCENT CURRENT CMOS LDO REGULATOR |
| GMAC97A6 |
285Kb/4P |
SENSIT IVE GAT E TRIACS SILICON BIDIRECT IONAL THYRISTORS 0. 8A, 4 00V |
| BAT54RSLT1 |
77Kb/1P |
Dual Series Schottky Barrier Diodes |
| GBAW56 |
145Kb/2P |
The GBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology and encapsulated in a small SOT-23 plastic SMD package |
| GSC93BC46-66 |
286Kb/8P |
3 - w i r e S e r i a l E E P RO Ms 1 K / 2 K / 4 K |
| GP24BC01-16 |
277Kb/9P |
2 - w i r e S e r i a l E E P RO M 1 K / 2 K / 4 K / 8 K / 1 6 K |
| GSC24BC01-16 |
296Kb/9P |
2 - w i r e S e r i a l E E P RO Ms 1 K / 2 K / 4 K / 8 K / 1 6 K |
| GDBAS40 |
171Kb/2P |
S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A |
| GDBAS70 |
133Kb/2P |
S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A |
| GDBAT54 |
281Kb/2P |
S U R FA C E MO U N T, S C H O T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 3 5 0mA |
| GD103SD |
197Kb/2P |
S U R FA C E MO U N T, S C H O T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 3 5 0mA |
| GSBAS40 |
214Kb/2P |
S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A |
| GS420SD |
169Kb/2P |
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A |
| GS421SD |
155Kb/2P |
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A |
| GS401SD |
168Kb/2P |
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 5 A |
| GS400SD |
153Kb/2P |
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 5 A |
| GBAV99 |
192Kb/2P |
The GBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits |
| GBAV70 |
197Kb/3P |
The GBAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits |
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