| メーカー | 部品番号 | データシート | 部品情報 |

Infineon Technologies A...
|
IDW10G120C5B |
815Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
| IDW30G120C5B |
593Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
| IDW20G120C5B |
593Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
| IDW15G120C5B |
590Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
| IDW40G120C5B |
593Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
| IPA60R280C6 |
2Mb/19P |
Metal Oxide Semiconductor Field Effect Transistor Rev. 2.1, 2010-02-09 |
| IPP60R190C6 |
2Mb/19P |
Metal Oxide Semiconductor Field Effect Transistor Rev. 2.1, 2010-02-09 |
| IPA60R950C6 |
1Mb/18P |
Metal Oxide Semiconductor Field Effect Transistor Rev. 2.1, 2010-03-11 |
| BSZ017NE2LS5I |
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0 |
| IPW60R330P6 |
3Mb/19P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.2,2015-07-10 |
| BSZ0506NS |
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2015-04-27 |
| IPC302N20N3 |
544Kb/4P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.6,2015-04-08 |
| IPP50R500C |
1Mb/14P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.1,2014-06-06 |
| IPA65R190C7 |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2013-10-18 |
| IPA60R520E6 |
1Mb/16P |
Metal Oxide Semiconductor Field Effect Transistor Rev. 2.2, 2014-12-10 |
| IPD65R250E6 |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.2,2013-07-30 |
| IPD65R1K4CFD |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor 2013-07-31 revision:2.1 |
| IPD65R1K4C6 |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2013-07-26 |
| IPB117N20NFD |
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2014-02-06 |
| IPB65R065C7 |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2013-10-11 |