| メーカー | 部品番号 | データシート | 部品情報 |
WOLFSPEED, INC.
|
CG2H80060D |
1Mb/8P |
60 W, 8.0 GHz, GaN HEMT Die
Rev. 0.2, 2022-11-3 |
| CGHV1J070D |
982Kb/10P |
70 W, 18.0 GHz, GaN HEMT Die
Rev. 2.0, 2022-7-27 |
| CGHV40320D |
833Kb/8P |
320 W, 4.0 GHz, GaN HEMT Die
Rev. 1.2, 2022-12-12 |
| CG2H80015D |
1Mb/9P |
15 W, 8.0 GHz, GaN HEMT Die
Rev. 2.0, 2022-7-27 |
| CG2H80045D |
1Mb/8P |
45 W, 8.0 GHz, GaN HEMT Die
Rev. 0.2, 2022-11-3 |
| CGHV60040D |
1Mb/8P |
40 W, 6.0 GHz, GaN HEMT Die
Rev. 1.3, 2022-12-12 |
| CGHV60075D5 |
965Kb/8P |
75 W, 6.0 GHz, GaN HEMT Die
Rev. 1.3, 2022-12-12 |
| CGH60008D |
977Kb/9P |
8 W, 6.0 GHz, GaN HEMT Die
Rev. 1.2, 2022-11-23 |
| CGH60015D |
980Kb/9P |
15 W, 6.0 GHz, GaN HEMT Die
Rev. 4.2, 2022-12-1 |
| CGH60060D |
1Mb/8P |
60 W, 6.0 GHz, GaN HEMT Die
Rev. 4.2, 2022-12-2 |
| CGH60120D |
1Mb/8P |
120 W, 6.0 GHz, GaN HEMT Die
Rev. 4.2, 2022-12-2 |
| CGHV1J006D |
868Kb/9P |
6 W, 18.0 GHz, GaN HEMT Die
Rev. 2.0, 2022-7-27 |
| CGHV1J025D |
1Mb/10P |
25 W, 18.0 GHz, GaN HEMT Die
Rev. 2.2, 2022-12-2 |
| CG2H80030D |
1Mb/9P |
30 W, 8.0 GHz, GaN HEMT Die
Rev. 2.0, 2022-7-27 |
| CG2H80120D |
1Mb/8P |
120 W, 8.0 GHz, GaN HEMT Die
Rev. 0.3, 2022-11-3 |
| CGH60030D |
1Mb/9P |
30 W, 6.0 GHz, GaN HEMT Die
Rev. 4.2, 2022-12-1 |
| CGHV60170D |
979Kb/8P |
170 W, 6.0 GHz, 50V GaN HEMT Die
Rev. 1.2, 2022-12-12 |
| CGHV14800F1 |
1Mb/18P |
DC-1.4 GHz, 800 W GaN Transistor
Rev. 0.0 July 2022 |
| WST33H0NC |
1Mb/16P |
2.4-2.5 GHz, 300 W GaN Transistor
Rev. 0.0 April 2023 |
| CGHV38375F |
1Mb/22P |
400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN-on-Silicon Carbide Transistor (IM-FET)
Rev. 1.0, 2022-10-12 |
Japanese ▼ 
English
Chinese
German
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
