| メーカー | 部品番号 | データシート | 部品情報 |

WOLFSPEED, INC.
|
C3M0160120J |
1Mb/10P |
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev. A, 04-2020 |
| CPM2-1200-0040A |
524Kb/7P |
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Rev. 1, 11-2020 |
| C3M0350120D |
729Kb/10P |
C3M0350120D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev. A, 03-2020 |
| CMPA1D1E025F |
2Mb/19P |
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Rev. 2.3, 2022-12-13 |
| CMPA5259050F |
856Kb/11P |
50 W, 4.9 – 5.9 GHz, 28 V, GaN MMIC for Radar Power Amplifiers Rev. 2.2, November 2020 |
| PTRA083818NF |
708Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz Rev. 06.2, 2022-1-27 |
| PTRA093818NF |
685Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz Rev. 06.2, 2022-01-04 |
| PTRA097008NB |
556Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz Rev. 04, 2023-06-22 |
| PTVA084007NF |
497Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Rev. 04.2, 2022-02-13 |
| PTVA120251EA |
787Kb/14P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Rev. 06, 2023-07-10 |
| PXAE261908NF |
568Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz Rev. 04. 2023-7-24 |
| GTVA126001EC_FC |
443Kb/8P |
Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Rev. P06, 2020-03-10 |
| PTRA084808NF |
881Kb/12P |
Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz Rev. 03.4, 2022-1-27 |
| PTVA102001EA |
540Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz Rev. 05, 2023-07-10 |
| PTVA120252MT |
553Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz Rev. 04.1, 2022-02-13 |
| PXAD214218FV |
524Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-23 |
| PXFC191507FC |
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz Rev. 04, 2023-06-28 |
| PXFE211507FC |
763Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-28 |
| PTFC270101M |
933Kb/22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28 |
| PTRA087008NB |
731Kb/11P |
Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Rev. 03.4, 2022-02-13 |