| メーカー | 部品番号 | データシート | 部品情報 |

WOLFSPEED, INC.
|
PTVA127002EV |
691Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Rev. 05, 2023-07-10 |
| PXAC210552FC |
702Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28 |
| PXAE263708NB |
612Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23 |
| GTRA362802FC-V1 |
553Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27 |
| GTRA260502M |
762Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz Rev. 04. 2023-06-26 |
| GTRA374902FC |
459Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27 |
| GTRA360502M-V1 |
844Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27 |
| GTRA262802FC |
515Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27 |
| GTVA212701FA |
566Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27 |
| GTVA220701FA |
736Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27 |
| GTVA261802FC |
536Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27 |
| GTRA214602FC-V1 |
522Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz Rev. 02.1, 2022-1-27 |
| GTRA362002FC-V1 |
435Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23 |
| GTRA384802FC-V1 |
585Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27 |
| GTVA101K42EV |
2Mb/14P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, DC – 1400 MHz Rev. 4.5, March 2021 |
| GTRA364002FC |
511Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27 |
| GTVA262711FA |
594Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27 |
| GTVA261701FA-V1 |
750Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27 |
| GTVA263202FC |
632Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27 |
| PTMC210404MD |
847Kb/8P |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W, 28 V, 1805 – 2200 MHz Rev. 04.1, 2022-1-27 |