| メーカー | 部品番号 | データシート | 部品情報 |

STMicroelectronics
|
STW48N60M2 |
717Kb/12P |
Extremely low gate charge January 2017 Rev 3 |

Cornell Dubilier Electr...
|
716P |
381Kb/15P |
Extremely low dissipation factor |

Guangdong Youtai Semico...
|
BAT54XW |
266Kb/3P |
Extremely Fast Switching Speed |

STMicroelectronics
|
STW70N60DM2 |
724Kb/12P |
Extremely high dv/dt ruggedness December 2015 Rev 4 |
| STP45N60DM2AG |
420Kb/13P |
Extremely high dv/dt ruggedness |
| STFI10NK60Z |
530Kb/13P |
Extremely high dv/dt capability March 2012 Rev 3 |

Murata Manufacturing Co...
|
TZW4Z010A001B00 |
197Kb/3P |
Extremely high self-resonant frequency |
| TZW4Z010A001R00 |
197Kb/3P |
Extremely high self-resonant frequency |

FutureWafer Tech Co.,Lt...
|
FLC052AD |
922Kb/6P |
Extremely Low Capacitance TVS Diode |
| FLC052XD |
1Mb/10P |
Extremely Low Capacitance TVS Diode |

Silikron Semiconductor ...
|
SSF2715 |
452Kb/6P |
Extremely high dv/dt capability |

IRC - a TT electronics ...
|
PLO5R020F |
219Kb/2P |
Extremely Low Resistance Power Wirewounds |

KODENSHI_AUK CORP.
|
DN100S |
252Kb/4P |
Extremely low collector-to-emitter |

Central Semiconductor C...
|
CMLTA94 |
441Kb/3P |
EXTREMELY HIGH VOLTAGE PNP TRANSISTOR |

Silikron Semiconductor ...
|
SSF4N60 |
654Kb/6P |
Extremely high dv/dt capability |

FutureWafer Tech Co.,Lt...
|
BLC05CX |
1Mb/5P |
Extremely Low Capacitance ESD device |

STMicroelectronics
|
STP18N60DM2 |
716Kb/13P |
Extremely high dv/dt ruggedness |
| STW35N60DM2 |
704Kb/12P |
Extremely high dv/dt ruggedness September 2015 Rev 1 |
| STF24N60DM2 |
821Kb/13P |
Extremely high dv/dt ruggedness March 2015 Rev 4 |
| STB6N52K3 |
1Mb/22P |
Extremely high dv/dt capability March 2011 Rev 2 |