| メーカー | 部品番号 | データシート | 部品情報 |

Murata Manufacturing Co...
|
TZW4Z1R5A001B00 |
197Kb/3P |
Extremely high self-resonant frequency |
| TZW4Z1R5A001R00 |
197Kb/3P |
Extremely high self-resonant frequency |

STMicroelectronics
|
STW72N60DM2AG |
728Kb/12P |
Extremely high dv/dt ruggedness December 2015 Rev 4 |

FutureWafer Tech Co.,Lt...
|
FESD05BLCIS |
811Kb/5P |
Extremely Low Capacitance TVS Diode |

IXYS Corporation
|
CPC5608 |
98Kb/4P |
Extremely Low Static Current Draw |

NXP Semiconductors
|
PMV56XN |
95Kb/12P |
UTrenchMOS extremely low level FET Rev. 02-24 June 2004 |

KODENSHI_AUK CORP.
|
DN030U |
296Kb/4P |
Extremely low collector-to-emitter |

Silikron Semiconductor ...
|
SSF8N60 |
440Kb/6P |
Extremely high dv/dt capability |
| SSF8N65 |
439Kb/6P |
Extremely high dv/dt capability |
| SSF7N60 |
439Kb/6P |
Extremely high dv/dt capability |

KODENSHI_AUK CORP.
|
DN030S |
267Kb/4P |
Extremely low collector-to-emitter |

NXP Semiconductors
|
PMV31XN |
241Kb/12P |
UTrenchMOS extremely low level FET Rev. 01-26 February 2003 |

IRC - a TT electronics ...
|
LPW-351202F |
202Kb/2P |
Extremely Low Resistance Power Wirewounds |

International Rectifier
|
PVN013PBF |
191Kb/6P |
Extremely low off-state leakage |

STMicroelectronics
|
STP35N60DM2 |
733Kb/13P |
Extremely high dv/dt ruggedness |

FutureWafer Tech Co.,Lt...
|
BLC05CX-1.5PF |
1,003Kb/5P |
Extremely Low Capacitance ESD device |

ZP Semiconductor
|
PMV56XN |
190Kb/3P |
mTrenchMOS??extremely low level FET |

TT Electronics.
|
SOT143 |
547Kb/4P |
Extremely small industry standard package |

FutureWafer Tech Co.,Lt...
|
ESD3LCS |
809Kb/4P |
Extremely Low Capacitance TVS Array |
| FESD05LCDS |
890Kb/6P |
Extremely Low Capacitance TVS Diode |