メーカー | 部品番号 | データシート | 部品情報 |
ON Semiconductor
|
MUR490E |
79Kb/5P |
ULTRAFAST RECTIFIERS 4.0 AMPS, 900 - 1000 VOLTS February, 2006 ??Rev. 3 |
NTBG060N090SC1 |
794Kb/8P |
Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L May, 2022 - Rev. 4 |
NVBG020N090SC1 |
327Kb/8P |
Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, D2PAK-7L May, 2022 - Rev. 3 |
FQA9N90C-F109 |
1Mb/9P |
N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω December-2017, Rev 3 |
FQA9N90-F109 |
1Mb/9P |
N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω September-2017, Rev. 3 |
NTBG020N090SC1 |
325Kb/8P |
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L January, 2023 - Rev. 4 |
NVHL020N090SC1 |
336Kb/8P |
Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L May, 2022 - Rev. 3 |
NTH4L020N090SC1 |
331Kb/8P |
Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L May, 2022 - Rev. 1 |
NTHL060N090SC1 |
773Kb/7P |
MOSFET - SiC Power, Single N-Channel 900 V, 60 m, 46 A May, 2020 ??Rev. 2 |
NTHL020N090SC1 |
264Kb/8P |
MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A March, 2020 ??Rev. 1 |
NTBG020N090SC1 |
335Kb/8P |
MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 900 V, 20 m, 112 A March, 2020 ??Rev. 1 |
NVHL020N090SC1 |
268Kb/8P |
MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A March, 2020 ??Rev. 1 |
NTBG060N090SC1 |
802Kb/8P |
MOSFET - SiC Power, Single N-Channel, D2PAK-7L 900 V, 60 m, 44 A March, 2020 ??Rev. 1 |
NVBG020N090SC1 |
241Kb/8P |
MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 900 V, 20 m, 112 A March, 2020 ??Rev. 1 |
NXH010P90MNF1PTG |
1Mb/14P |
Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M2 MOSFET, 900 V, 2-PACK Half Bridge Topology, F1 Package February, 2023 - Rev. P3 |
NXH020U90MNF2PTG |
2Mb/14P |
Silicon Carbide (SiC) Module – EliteSiC, 2x10mohm SiC M1 MOSFET, 1200 V, 2 x 100 A, Vienna Module 900 V, F2 Package February, 2023 - Rev. 4 |