Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. Features • Very high speed: 55 ns and 70 ns • Wide voltage range: 1.65V – 2.25V • Pin-compatible with CY62147CV18 • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 6 mA @ f = fmax • Ultra low standby power • Easy memory expansion with CE, and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered 48-ball BGA
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