Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. Features • Registered inputs and outputs for pipelined operation • 128K × 32 common I/O architecture • 3.3V core power supply (VDD) • 2.5V/3.3V I/O power supply (VDDQ) • Fast clock-to-output times — 2.6 ns (for 250-MHz device) • Provide high-performance 3-1-1-1 access rate • User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences • Separate processor and controller address strobes • Synchronous self-timed writes • Asynchronous output enable • Available in lead-free 100-Pin TQFP package, lead-free and non-lead-free 119-Ball BGA package • “ZZ” Sleep Mode Option
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