| メーカー | 部品番号 | データシート | 部品情報 |
Mitsubishi Electric Sem... |
MGFC1403
|
232Kb / 6P |
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
|
MGF1304A
|
488Kb / 4P |
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
|
MGF1305
|
487Kb / 4P |
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
California Eastern Labs |
NE68719
|
189Kb / 5P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
Toshiba Semiconductor |
3SK320
|
525Kb / 9P |
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Maxim Integrated Produc... |
MAX3275
|
1Mb / 9P |
Low-Noise, Fibre Channel Transimpedance Amplifiers
Rev 1; 3/05 |
Toshiba Semiconductor |
2SK370
|
221Kb / 4P |
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
|
2SK3320
|
193Kb / 4P |
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
|
2SK369
|
243Kb / 4P |
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Infineon Technologies A... |
BFP420H6327
|
542Kb / 9P |
For high gain low noise amplifiers
2009-12-02 |
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