Description
These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features
• RDS(on) = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A
• Low gate charge ( Typ. 15nC)
• Low Crss ( Typ. 6.3pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant