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K9F1G08U0A データシート (PDF) - Samsung semiconductor

K9F1G08U0A Datasheet PDF - Samsung semiconductor
部品番号 K9F1G08U0A
ダウンロード  K9F1G08U0A ダウンロード

ファイルサイズ   677.55 Kbytes
ページ   37 Pages
メーカー  SAMSUNG [Samsung semiconductor]
ホームページ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
部品情報 FLASH MEMORY

K9F1G08U0A Datasheet (PDF)

Go To PDF Page ダウンロード データシート
K9F1G08U0A Datasheet PDF - Samsung semiconductor

部品番号 K9F1G08U0A
ダウンロード  K9F1G08U0A Click to download

ファイルサイズ   677.55 Kbytes
ページ   37 Pages
メーカー  SAMSUNG [Samsung semiconductor]
ホームページ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
部品情報 FLASH MEMORY

K9F1G08U0A データシート (HTML) - Samsung semiconductor

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K9F1G08U0A 製品詳細

GENERAL DESCRIPTION
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES
· Voltage Supply
   -1.8V device(K9F1GXXQ0M): 1.70V~1.95V
   - 2.65V device(K9F1GXXD0M) : 2.4~2.9V
   -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
· Organization
   - Memory Cell Array
   -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
   -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
   - Data Register
      -X8 device(K9F1G08X0M): (2K + 64)bit x8bit
      -X16 device(K9F1G16X0M): (1K + 32)bit x16bit
   - Cache Register
      -X8 device(K9F1G08X0M): (2K + 64)bit x8bit
      -X16 device(K9F1G16X0M): (1K + 32)bit x16bit
· Automatic Program and Erase
   - Page Program
      -X8 device(K9F1G08X0M): (2K + 64)Byte
      -X16 device(K9F1G16X0M): (1K + 32)Word
   - Block Erase
      -X8 device(K9F1G08X0M): (128K + 4K)Byte
      -X16 device(K9F1G16X0M): (64K + 2K)Word
· Page Read Operation
   - Page Size
   - X8 device(K9F1G08X0M): 2K-Byte
   - X16 device(K9F1G16X0M) : 1K-Word
   - Random Read : 25ms(Max.)
   - Serial Access : 50ns(Min.)*
      *K9F1GXXQ0M : 80ns
· Fast Write Cycle Time
   - Program time : 300ms(Typ.)
   - Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years
· Command Register Operation
· Cache Program Operation for High Performance Program
· Power-On Auto-Read Operation
· Intelligent Copy-Back Operation
· Unique ID for Copyright Protection
· Package :
   - K9F1GXXX0M-YCB0/YIB0
      48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
   - K9F1G08U0M-VCB0/VIB0
      48 - Pin WSOP I (12X17X0.7mm)
   - K9F1GXXX0M-PCB0/PIB0
      48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
   - K9F1G08U0M-FCB0/FIB0
      48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
      * K9F1G08U0M-V,F(WSOPI ) is the same device as
         K9F1G08U0M-Y,P(TSOP1) except package type.




同様の部品番号 - K9F1G08U0A

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