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2SC2873-O データシート(PDF) 1 Page - Micro Commercial Components |
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2SC2873-O データシート(HTML) 1 Page - Micro Commercial Components |
1 / 4 page ![]() NPN Silicon Epitaxial Transistors Features Low saturation voltage High speed switching time Complementary to 2SA1213 Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current 2.0 A PC Collector power dissipation 0.5 W TJ Junction Temperature 150 TSTG Storage Temperature -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC=1mAdc, IB=0) 50 --- --- Vdc ICBO Collector-Base Cutoff Current (VCB=50Vdc,IE=0) --- --- 0.1 uAdc IEBO Emitter-Base Cutoff Current (VEB=5.0Vdc, IC=0) --- --- 0.1 uAdc ON CHARACTERISTIC hFE(1) DC Current Gain (IC=0.5Adc, VCE=2.0Vdc) 70 --- 240 --- hFE(2) DC Current Gain * (IC=2.0Adc, VCE=2.0Vdc) 20 --- --- --- VCE(sat) Collector-Emitter Saturation Voltage (IC=1.0Adc, IB=0.05Adc) --- --- 0.5 Vdc VBE(sat) Base-Emitter Saturation Voltage (IC=1.0Adc,IB=0.05Adc) --- --- 1.2 Vdc fT Transition Frequency (VCE=2.0Vdc, IC=0.5Adc) --- 120 --- MHz Cob Collector output capacitance (VCB=10Vdc,IE=0, f=1.0MHz) --- 30 --- pF Revision: B 20 13/01/01 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC SOT-89 1. Base 2. Collector 3. Emitter TM Micro Commercial Components CLASSIFICATION OF HFE(1) Rank O Range 70-140 Marking MO Y 120-240 MY www.mccsemi.com 1 of 4 2SC2873-O 2SC2873-Y B A E D G H F K J C 12 3 V (BR)CBO Collector-Base Breakdown Voltage (IC=0.1mAdc, IB=0) 50 --- --- Vdc V (BR)EBO Emitter-Base Breakdown Voltage (IE=0.1mAdc, IC=0) 5.0 --- --- Vdc • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Halogen free available upon request by adding suffix "-HF" • |
同様の部品番号 - 2SC2873-O |
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同様の説明 - 2SC2873-O |
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