General Purpose Silicon Rectifiers

Page 1

REV:A

Voltage: 400 V

Current: 3.0 A

RoHS Device

A1N5404G-G

Dimensions in inches and (millimeter)

DO-27

Features

- Glass passivated rectifiers.

- Low reverse leakage current.

- High current capability.

- Comply with AEC-Q101

Mechanical data

- Case: JEDEC DO-27 molded plastic.

- Epoxy: UL 94V-0 rate flame retardant.

- Polarity: Color band denotes cathode.

- Mounting position: Any.

- Weight: 1.1 grams.

0.984(25.00) Min.

0.984(25.00) Min.

0.374(9.50)

0.335(8.50)

0.051(1.30)

0.047(1.20)

DIA.

0.220(5.60)

0.197(5.00)

DIA.

Parameter

Symbol

Unit

Maximum re

peak reverse voltage

current

Maximum RMS voltage

Maximum DC blocking voltage

Peak forward surge current, 8.3ms single

half sine-wave superimposed on rated load

(JEDEC method)

Maximum forward voltage @3.0A DC

Maximum DC reverse current

at rated DC blocking voltage

3.0

125

1.1

5.0

V

V

V

A

A

V

μA

Operating temperature range

Storage temperature range

Typical thermal resistance (Note 2)

15

-55 to +150

-55 to +150

°C

°C

°C/W

NOTES:

400

280

400

200

Maximum Ratings and Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

A1N5404G-G

AQW-BG002

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Maximum average forward

rectified current

Typical junction capacitance (Note 1)

50

pF

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance junction to ambient.

- Low forward voltage drop.